| Allicdata Part #: | 71V35761S183PFGI8-ND |
| Manufacturer Part#: |
71V35761S183PFGI8 |
| Price: | $ 3.69 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | IDT, Integrated Device Technology Inc |
| Short Description: | IC SRAM 4.5M PARALLEL 100TQFP |
| More Detail: | SRAM - Synchronous Memory IC 4.5Mb (128K x 36) Par... |
| DataSheet: | 71V35761S183PFGI8 Datasheet/PDF |
| Quantity: | 1000 |
| 1000 +: | $ 3.34885 |
| Write Cycle Time - Word, Page: | -- |
| Base Part Number: | IDT71V35761 |
| Supplier Device Package: | 100-TQFP (14x14) |
| Package / Case: | 100-LQFP |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -40°C ~ 85°C (TA) |
| Voltage - Supply: | 3.135 V ~ 3.465 V |
| Memory Interface: | Parallel |
| Access Time: | 3.3ns |
| Series: | -- |
| Clock Frequency: | 183MHz |
| Memory Size: | 4.5Mb (128K x 36) |
| Technology: | SRAM - Synchronous |
| Memory Format: | SRAM |
| Memory Type: | Volatile |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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Introduction to Memory
Memory is an important area of computer science and engineering, which deals with the process of storing and retrieving data from a computer memory. This process of storing and retrieving data from a computer memory is performed by a device known as a ‘memory device’.
There are two types of memory device: static memory devices and dynamic memory devices. Static memory devices are used to store data that is fixed over time, while dynamic memory devices are used to store data that is constantly changing.
Memory device are of various types: SRAM (Static Random Access Memory), DRAM (Dynamic Random Access Memory), PROM (Programmable Read Only Memory), EPROMs (Erasable Programmable Read Only Memory), EEPROMs (Electrically Erasable Programmable Read Only Memory), FLASH Memory, etc.
71V35761S183PFGI8 is one such memory device, belonging to the EEPROM (Erasable Programmable Read Only Memory) family. EEPROMs are capable of storing data even when the power supply is switched off, making them very power efficient, which is an important feature in modern digital devices.
Application Field of 71V35761S183PFGI8
71V35761S183PFGI8 is an ideal EEPROM device for a wide range of applications such as embedded systems, memory expansion, digital devices, automotive applications, etc. It is ideal for embedded systems, owing to its low power consumption and high density, making it suitable for use in a wide range of digital devices. It is also a great choice for memory expansions, for example when expanding the memory of microcontrollers. It is also suitable for use in automotive applications, where low power consumption and reliable storage of data is necessary.
Working Principle of 71V35761S183PFGI8
At a basic level, the working principle of 71V35761S183PFGI8 is quite simple. It works by storing data in an internal memory array, which can then be read and written to at the users’ discretion. However, the internal workings of the EEPROM are slightly more complex, and involve a range of technologies, such as Flash memory and various other memory types.
The EEPROM works by using a floating-gate MOS transistor, also known as a FG-MOS, which is made up of two layers. The top layer is a control gate, which is used to control the flow of electrons in and out of the transistor, while the bottom layer is the floating gate, which is used to store the electrons. The electrons in the floating gate can be written to or erased using a charge pump, allowing for the data to be stored in the EEPROM.
In conclusion, 71V35761S183PFGI8 is an ideal choice for a range of applications, owing to its low power consumption and its ability to store data even when no power supply is present. Its internal workings involve the use of a FG-MOS transistor, which is used to store and erase data, allowing the device to be used in a wide range of digital devices.
The specific data is subject to PDF, and the above content is for reference
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71V35761S183PFGI8 Datasheet/PDF