71V321S55J8 Allicdata Electronics
Allicdata Part #:

71V321S55J8-ND

Manufacturer Part#:

71V321S55J8

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 16K PARALLEL 52PLCC
More Detail: SRAM - Dual Port, Asynchronous Memory IC 16Kb (2K ...
DataSheet: 71V321S55J8 datasheet71V321S55J8 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 16Kb (2K x 8)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 52-LCC (J-Lead)
Supplier Device Package: 52-PLCC (19.13x19.13)
Base Part Number: IDT71V321
Description

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Memory

The 71V321S55J8 is a 512kb high-speed Static Random Access Memory (SRAM) designed for use in a wide range of applications. It is a monolithic IC with a 16-bit data bus, allowing it to transfer data at high speeds. It has a low power consumption rate and requires a low quiescent current. The 71V321S55J8 has four bank selection pins, allowing it to be used in applications that require multiple independent memory banks.

The 71V321S55J8 has a write cycle time of 8 ns, allowing it to access data quickly, without delaying the processing of the data. It is also designed to operate at high temperatureup to 125°C. The device offers an alternate caching mechanism for low latency requirements in systems that need a high data access rate.

The 71V321S55J8 offers a wide range of features, including an asynchronous read and write capability, error detection and correction, and an internal power-on reset. It also supports multiple bus widths, allowing it to be used in various systems. The device is RoHS compliant and is designed with a 0.35µm process.

The 71V321S55J8 is widely used in a variety of applications, such as enterprise storage and networking, compute servers, embedded systems, and military applications. Its high-performance, low-power design makes it an ideal choice for applications that require fast data access times.

The 71V321S55J8 operates on a principle of memory storage. It stores data in cells located in an internal array of SRAM cells. When data is written to the memory, the cell associated with the data bit is activated and its value is modified. When data is read from the memory, the contents of the cells associated with the respective bits are read and the result is sent out to the processor.

Additionally, when data is written to the 71V321S55J8, it is checked for errors to ensure data integrity. If any errors are detected, the device will correct them to ensure that the data stored is correct. This makes the 71V321S55J8 ideal for applications that require accurate and reliable data storage.

The 71V321S55J8 is an ideal choice for a variety of applications that require high-speed memory access and reliable data storage. Its wide range of features, low power consumption and low write-cycle time makes it a great choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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