71V3556SA133BG8

Memory

71V3556SA133BG8 is a low-voltage, low-power, synchronous, SDRAM, designed and developed by Mitsubishi. It adopts a 16Mb SDRAM chip with a 32bit/36bit internal data bus, a four-bank configuration, and a common frequency specification of 100MHz/133MHz. This part is packaged in a TSOP-II(Thin Small Out-Line Package) that is 57.3mm2 with 7×7 mm2 body size, 77 balls with a 0.50mm ball pitch.

Application field

The 71V3556SA133BG8 is ideal for applications requiring high memory density and tight space constraints including wireless handsets, PDAs, smart phones, digital cameras, digital recording devices, small form factor PCs and gaming devices. As an example, in a PDA application, this device provides an effective solution to applications that require emulation of small data storage. In other words, the 71V3556SA133BG8 can be used as a substitute of an augmented Flash memory.

Working principle

The working principle of 71V3556SA133BG8 memory module is based on Synchronous DRAM technology. SDRAM is the Synchronous version of the traditional DRAM, meaning that all the operation are synchronized to a clock signal. This architecture gives rise to lower power consumption when compared to the asynchronous versions, with faster speeds and higher transfer rates. By using a system clock, the timing of memory operations can be established, thus improving the communication between the processor and the memory. This technology basically utilizes two data lines; one for reading the information in a given address, and the other one to write data in a location in the RAM.

The 71V3556SA133BG8 also uses a buffered Clock. This means that the clock signal is feed by external clock twice as fast as the external clock. This allows the system to access two or more consecutive addresses within one cycle of the external clock. The device also features four banks, allowing the optimization of the device with regard to the system\'s requirements. A fourth line, the Bank Decoder selects the active bank for operation. It also includes an AutoRefresh feature, which does not required any CPU cycle for memory refreshing operations.

In conclusion, the 71V3556SA133BG8 is a low-voltage, low-power, synchronous, SDRAM memory device that is ideal for applications requiring high memory density and tight space constraints. It offers several features that make it attractive, such as high transfer rates, four banks, auto-refresh, low power consumption and its low voltage operation.