71V3556SA133BQI Allicdata Electronics
Allicdata Part #:

71V3556SA133BQI-ND

Manufacturer Part#:

71V3556SA133BQI

Price: $ 4.80
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 4.5M PARALLEL 165CABGA
More Detail: SRAM - Synchronous ZBT Memory IC 4.5Mb (128K x 36)...
DataSheet: 71V3556SA133BQI datasheet71V3556SA133BQI Datasheet/PDF
Quantity: 1000
136 +: $ 4.36521
Stock 1000Can Ship Immediately
$ 4.8
Specifications
Write Cycle Time - Word, Page: --
Base Part Number: IDT71V3556
Supplier Device Package: 165-CABGA (13x15)
Package / Case: 165-TBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135 V ~ 3.465 V
Memory Interface: Parallel
Access Time: 4.2ns
Series: --
Clock Frequency: 133MHz
Memory Size: 4.5Mb (128K x 36)
Technology: SRAM - Synchronous ZBT
Memory Format: SRAM
Memory Type: Volatile
Part Status: Active
Packaging: Tray 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory is important in many electronic systems, from personal computers to specialized devices and even embedded systems. It stores data and speeds up the performance of the system. The 71V3556SA133BQI is a dynamic random access memory (DRAM) that is designed for moderate to high performance applications. It has a fast data access speed, low power consumption, and is resistant to shock, making it a good choice for many applications in a variety of fields.

Overview of the 71V3556SA133BQI

The 71V3556SA133BQI is designed to be used as a main memory or in applications that require a large data storage capacity. It is capable of storing and accessing data at speeds of up to 133MHz, making it one of the faster DRAMs available. It is also one of the more power efficient DRAMs, since it is capable of operating at 1.35 volts and drawing a maximum of 127mA when active, and less than 10mA when in power down mode.

The 71V3556SA133BQI also offers shock resistance up to a minimum of 200G, ensuring that, even in precarious situations, the memory can hold up and not lose stored data. All of these features make it a reliable, robust memory with a wide range of applications.

Applications of the 71V3556SA133BQI

The 71V3556SA133BQI is a versatile memory and can be used in a variety of applications. Some of the most popular include:

  • Cell phones: The fast access speed and low power consumption make the 71V3556SA133BQI perfect for cell phones, where speed and battery life are of utmost importance.
  • Desktop and laptop computers: The high speed, large capacity, and low power consumption of the 71V3556SA133BQI make it ideal for use in desktop and laptop computers.
  • High performance embedded systems: Systems that require quick execution of data and need to store large amounts of data will benefit from the fast access time, low power consumption, and large capacity of the 71V3556SA133BQI.
  • Servers: The 71V3556SA133BQI\'s combination of speed, low power consumption, and shock resistance make it an ideal choice for servers.
  • Game consoles: Speed and stability are always important criteria for game consoles, and the 71V3556SA133BQI can provide both.

In addition to these specific uses, the 71V3556SA133BQI has a broad range of other applications in aviation, medical, and other similar fields.

Working Principle of the 71V3556SA133BQI

The 71V3556SA133BQI uses an asynchronous design whereby data is stored on an internal microchip and accessed at set intervals. This differs from synchronous memory in which the information is accessed on demand. Asynchronous memory is generally slower but more reliable, and is better suited to systems in which the processing speed is not the primary concern.

The design of the 71V3556SA133BQI incorporates three technologies known as pipelining, prefetching, and interleaving. Pipelining allows data to be read or written multiple times without waiting for the process to finish each time. Prefetching allows data to be stored in advance, allowing it to be accessed more quickly. Interleaving is a technique that uses strategically placed wires to reduce latency when accessing stored data.

The 71V3556SA133BQI also follows the JEDEC standard, which defines parameters for the device\'s operation and reliability. For instance, it specifies the refresh rate, voltage levels, and the refresh command of the device, among other parameters.

The 71V3556SA133BQI is an effective and reliable memory for many applications and performs well in many types of systems. It has a high data access speed, low power consumption, and is highly shock resistant, making it a good choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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