71V30L55TFI

Series:	--
Packaging:	Tray
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Dual Port, Asynchronous
Memory Size:	8Kb (1K x 8)
Write Cycle Time - Word, Page:	55ns
Access Time:	55ns
Memory Interface:	Parallel
Voltage - Supply:	3 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	64-LQFP
Supplier Device Package:	64-TQFP (10x10)

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71V30L55TFI Memory

71V30L55TFI memory is a 3V Flash memory device based on NAND architecture. The 1Mbit device uses a single, cost-effective solution offering low-voltage programming, low write/erase voltage, and high-performance data transfer. It offers a fast USB interface compatible with the latest USB 2.0 standards, enabling faster data transfers than conventional memories.71V30L55TFI memory is ideal for data storage in a wide range of applications, including digital cameras and PDAs. The device also has a wide range of uses as a system memory, including audio and video streaming, GPS navigation, and other data-intensive applications.The 71V30L55TFI is a programmable memory that allows data to be programmed, erased, and re-programmed. It employs a non-volatile cell, called a NAND cell, which stores the data until they are erased. A NAND cell consists of two transistors, a gate and a source, that are connected to two points of the memory cell. The two transistors of the cell form a high impedance when the gate is open, otherwise the NAND cell behaves as an open drain.71V30L55TFI memory also includes an address translator and an external data bus, allowing it to communicate with external systems. The address translator provides an interface between the external address and the memory. The data bus is used to transfer data between the memory and external systems. The address translator allows the external system to access data stored in the 71V30L55TFI devices, while the data bus enables data to be transferred in and out of the memory.The 71V30L55TFI memory has a wide operating temperature range, from -40°C to +85°C, and has an industrial temperature grade (-40°C to +125°C). It also has a wide program/erase voltage range, from 1.8V to 3V, allowing it to be used in a wide range of devices.In addition, the 71V30L55TFI memory has a high endurance cycle, allowing it to maintain data integrity and reliability, even after many cycles of write/erase operations. This, together with its high program/erase voltages and operating temperature range, make it an ideal device for data storage in a range of different applications.Overall, 71V30L55TFI memory is an extremely reliable data storage solution, with features that make it suited to use in a wide range of applications. Its wide operating temperature range and endurance cycle are ideal for applications that require data to be retained in hostile environment, while its high program/erase voltages and address translator ensure compatibility with a variety of external systems. In addition, its fast USB 2.0 interface provides quick and reliable data transfers, perfect for applications that require high data throughput.

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