71V3556S100PFGI8 Allicdata Electronics
Allicdata Part #:

71V3556S100PFGI8-ND

Manufacturer Part#:

71V3556S100PFGI8

Price: $ 3.98
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 4.5M PARALLEL 100TQFP
More Detail: SRAM - Synchronous ZBT Memory IC 4.5Mb (128K x 36)...
DataSheet: 71V3556S100PFGI8 datasheet71V3556S100PFGI8 Datasheet/PDF
Quantity: 1000
1000 +: $ 3.61675
Stock 1000Can Ship Immediately
$ 3.98
Specifications
Write Cycle Time - Word, Page: --
Base Part Number: IDT71V3556
Supplier Device Package: 100-TQFP (14x14)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135 V ~ 3.465 V
Memory Interface: Parallel
Access Time: 5ns
Series: --
Clock Frequency: 100MHz
Memory Size: 4.5Mb (128K x 36)
Technology: SRAM - Synchronous ZBT
Memory Format: SRAM
Memory Type: Volatile
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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Memory is one of the core components of computer systems and has an important impact on the performance of a computer. 71V3556S100PFGI8 is a type of static RAM (SRAM) chip that is often used in computer systems. It features a tightly packed configuration that includes a 6T bit cell storage array and a hybrid row decoders for increased speed and improved performance.

The 71V3556S100PFGI8 SRAM chip is useful in a range of applications, including:

  • Personal computers – used for system RAM and as cache memory for hard drives.
  • Embedded systems – found on many types of embedded boards and used for system RAM and as cache memory for ROM or Flash memory.
  • Networking devices – used for router memory and Ethernet switch memory.
  • Telecom systems – used as a buffer in IP phones and cell phones.
  • Automotive systems – used as memory to store information in airbags, engine controllers, and other vehicle systems.

The 71V3556S100PFGI8 SRAM chip is designed to operate at very high speeds, providing fast read and write access times, which makes it ideal for a wide range of applications.

The chip itself consists of a 6T bit cell architecture, which includes an embedded write sense amplifier and an internal data I/O port for high speed operation. The embedded write sense amplifier is responsible for detecting write data and initiating a write cycle. The internal data I/O port allows for data exchange between multiple SRAM elements, eliminating the need for external components.

The chip also features a hybrid row decoder and array counter, which makes it easier to access the desired row and perform multiple operations at the same time. This means the 71V3556S100PFGI8 SRAM chip is capable of performing multiple functions simultaneously, greatly increasing its speed and efficiency.

The 71V3556S100PFGI8 SRAM chip is designed to operate at a voltage of 3.3V and can be operated at a temperature of -40°C to +105°C. It is available in a variety of package types, including TSOP, BGA, and QFP, making it ideal for a range of applications.

The 71V3556S100PFGI8 SRAM chip is designed to provide reliable performance and is a suitable option for a wide range of applications. It is well suited for embedded systems, networking devices, telecom systems, and automotive systems. Its high speeds, tightly packed configuration, and hybrid row decoder make it an ideal choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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