71V3576S133PFG

Write Cycle Time - Word, Page:	--
Base Part Number:	IDT71V3576
Supplier Device Package:	100-TQFP (14x14)
Package / Case:	100-LQFP
Mounting Type:	Surface Mount
Operating Temperature:	0°C ~ 70°C (TA)
Voltage - Supply:	3.135 V ~ 3.465 V
Memory Interface:	Parallel
Access Time:	4.2ns
Series:	--
Clock Frequency:	133MHz
Memory Size:	4.5Mb (128K x 36)
Technology:	SRAM - Synchronous
Memory Format:	SRAM
Memory Type:	Volatile
Part Status:	Active
Packaging:	Tray

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<p>Memory devices are ubiquitous in the modern world, from the smartphone in your pocket to the supercomputer in the research lab. The 71V3576S133PFG is a high-performance asynchronous static random access memory (SRAM) integrated circuit (IC) boosting fast operations and low power consumption. It is suitable for a wide range of consumer and industrial applications such as cellular telecommunication, automotive, consumer electronics, consumer appliances, and laptops.</p> <p>The 71V3576S133PFG is a CMOS SRAM with a split-gate polysilicon cell array configured with a memory array, data path including I/O part, sense amp and related logic capabilities. It has the features of fast random access time, low leakage current, higher dynamic current and good temperature stability.</p><p>The 71V3576S133PFG is designed as 128K x 8 bits SRAM organized as 16,384 x 8 words. It contains I/O registers, which are configured with toggling edges and single ended write operations. It is designed to operate from a single 5V power supply. It uses a write enable signal to write to the memory array and a burst counter to read from it. It has a wide operating temperature range from -40C to +85C for reliability and durability.</p><p>The 71V3576S133PFG IC is powered on by the write enable (WE) signal and its related write cycle. Then, the address and data are transferred to the address latch register and data latch register respectively which then stores it as memory before transferring them to the memory array consisting of the split-gate cells. During the write cycle, data is written to the memory array and the write cycle is completed when the write enable (WE) signal is de-asserted.</p><p>During the read cycle, address and data are transferred from the address and data latch registers to the memory array respectively. When the read enable (RE) signal is de-asserted, the data is read from the memory array and is output via the output registers. The read cycle then completes and the output data is available for further processing.</p><p>The 71V3576S133PFG has a burst rate of 1 clock cycle per burst. The burst length can be adjusted from 1 to 16 by the burst counter, which is done through some address modifications. Thus it allows the user to burst read or write data from/ to the memory with a single address command and without affecting the refreshing process.</p><p>In summary, the 71V3576S133PFG is an asynchronous SRAM with excellent performance, low power consumption and wide temperature range making it ideal for a variety of consumer and industrial applications. It contains a split-gate polysilicon cell array, address and data latch registers and a support logic set to enable fast random access and reliable data storage.</p>

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