A2T14H450-23NR6

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

A2T14H450-23NR6 is a high-frequency, metal-oxide semiconductor field-effect transistor (MOSFET). It is designed for use in the construction of electronic systems working at the radio frequency (RF) range. This type of MOSFET is of the depletion-mode, N-channel vertical DMOS type, which offers self-alignment capability in order to facilitate the designing of efficient and cost-effective RF power amplifiers.

The A2T14H450-23NR6 is a power transistor with its power dissipation of 700W and voltage rating of 100V. It is specifically designed to allow maximum current conduction in the narrow-band RF power amplifier, which is an essential requirement for the device. This power transistor operates in the frequency range of 868-960MHz with a maximum switching frequency of 1MHz. The use of this device allows a wide range of applications such as high-power amplifiers and differential amplifiers for linear operation.

The working principle of the A2T14H450-23NR6 is based on the MOSFET. The metal-oxide-semiconductor field-effect transistor (MOSFET) is a semiconductor device which consists of a source and a drain connected to a semiconductor substrate and a gate. When a voltage is applied to the gate, it creates an electric field which modulates the conductivity of a channel between the source and the drain. By controlling the voltage applied to the gate, the voltage is then able to control the current flow in the channel to on or off and this is known as amplification.

The A2T14H450-23NR6 MOSFET is a vertical DMOS power transistor which operates at ultra-high frequencies. The device is specifically designed with a power rating of 700W and a voltage rating of 100V, which provides maximum current conduction in the narrow-band RF power amplifier applications. At the same time, it features a very high switching frequency of 1MHz, which increases the system performance and reduces the size of passive components such as filters.

In conclusion, the A2T14H450-23NR6 MOSFET is a vertical DMOS power transistor designed for use in the construction of electronic systems working at the radio frequency (RF) range. The device offers self-alignment capability and operates in the frequency range of 868-960MHz with a maximum switching frequency of 1MHz. It provides maximum current conduction in the narrow-band RF power amplifier applications, making it suitable for a wide range of applications such as high-power amplifiers and differential amplifiers for linear operation.

The specific data is subject to PDF, and the above content is for reference