A2T18H160-24SR3

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The A2T18H160-24SR3 is a high voltage, normally-off depletion mode RF MOSFET, designed for use in wide variety of applications including those requiring high efficiency, high input impedance, and high linearity. It is capable of low-loss and high-frequency operation, making it a suitable choice for high-frequency radio frequency power amplification and linear power amplification.

The A2T18H160-24SR3 is a silicon on insulator (SOI) process that eliminates parasitic current flows and optimizes performance in RF applications. It is fabricated using advanced silicon-on-insulator (SOI) technology and a two-layer metallization process. It has an operating temperature range of up to +125°C and a breakdown voltage rating of 24V.

The A2T18H160-24SR3 is ideal for applications such as high-power and high-reliability RF linear power amplifiers, RF switches, RF high-linearity amplifiers, and high-frequency, low-power applications such as WiFi, Bluetooth, and ZigBee. It can also be used as a power amplifier for portable and low-power applications.

The working principle of the A2T18H160-24SR3 involves the use of its typical gate-source voltage threshold (VGS) with a negative gate voltage. This voltage threshold provides the necessary gate-source control for RF applications. In this configuration, when the gate voltage is applied above its threshold voltage, the current flowing between the source and drain is increased. Conversely, when the gate voltage is applied below its threshold voltage, the current flowing between the source and drain is decreased. This unique feature of the A2T18H160-24SR3 makes it well-suited for RF applications because of its capability to achieve high efficiency, low distortion, and high input impedance at high frequencies.

Additionally, the A2T18H160-24SR3 is also capable of providing over-voltage protection. Its capacitance is realized as a result of a combination of its channel thickness, gate oxide thickness, and doping profile. This combined capacitance aids in preventing over-voltage voltages from being applied to the device. In such cases, the device will self-regulate and limit any excessive voltage from reaching the drain and other areas of the high-frequency circuit.

The A2T18H160-24SR3 is a high-voltage, normally-off depletion mode RF MOSFET, designed for use in a wide variety of RF applications. Its SOI process eliminates parasitic current flows, while its two-layer metallization process ensures low-loss and high-frequency operation. Its over-voltage protection and variable gate voltage threshold makes it ideal for high-power and high-reliability RF linear power amplifiers, RF high-linearity amplifiers, and high-frequency, low-power applications.

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