
Allicdata Part #: | A2T18S260-12SR3-ND |
Manufacturer Part#: |
A2T18S260-12SR3 |
Price: | $ 71.39 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | AIRFAST RF POWER LDMOS TRANSISTO |
More Detail: | RF Mosfet LDMOS 28V 1.4A 1.805GHz ~ 1.995GHz 18.9d... |
DataSheet: | ![]() |
Quantity: | 1000 |
250 +: | $ 64.90130 |
Series: | -- |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 1.805GHz ~ 1.995GHz |
Gain: | 18.9dB |
Voltage - Test: | 28V |
Current Rating: | 10µA |
Noise Figure: | -- |
Current - Test: | 1.4A |
Power - Output: | 257W |
Voltage - Rated: | 65V |
Package / Case: | NI-780S-2L2L |
Supplier Device Package: | NI-780S-2L2L |
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A2T18S260-12SR3 is a part of the RF MOSFET family. It is a Radio Frequency Metal Oxide Semiconductor Field Effect Transistor. Popularly known by its acronym, MOSFET, it is widely used in various applications because of its wide range of electrical properties.
This type of transistor is used in RF applications. RF stands for Radio Frequency which means that it can handle signals with a frequency range from 10kHz into GHz range. It is mainly used in amplifier, communication and switching circuits.
Working principle of RF MOSFET is based on the application of an electric field to the source-drain channel of the device, which results into an enhancement in the conducting ability of the device. It works on the principle of blocking or passing an electrical signal through the transistor. It has a gate which is used to control the flow of current and it can take as much as 60V.
A2T18S260-12SR3 is especially used in antenna amplifiers and in power amplifiers. This means that when it is used in an amplifier, it is able to provide more power than the input power. It is often used in professional amplifiers and the power output of this transistor is between 10 to 40 watts. It also has a low switching time that makes it useful in wireless communication systems.
It is also used in various applications such as TV tuners and receivers, broadband amplifiers, power amplifiers, power supplies and RFID systems. Furthermore, A2T18S260-12SR3 transistor is also used in digital radio broadcast systems, multimedia audio systems and power amplifiers for satellite communication systems. This type of transistor can also be used in mobile communication systems such as 3G and 4G networks.
Apart from its various applications, the A2T18S260-12SR3 transistor is also known for its exceptional performance. It has very high power transfer efficiency and provides a linear distortion-free signal. The power rating of this transistor is up to 40 watts and it has high fidelity with very low noise levels, making it ideal for RF applications.
In conclusion, A2T18S260-12SR3 is a Radio Frequency Metal Oxide Semiconductor Field Effect Transistor with a wide range of applications. It is mainly used in antenna amplifiers, power amplifiers, power supplies, RFID systems and digital radio broadcast systems. Its power rating is up to 40 watts and it provides high power transfer efficiency with very low noise levels.
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