A2T18H450W19SR6 Allicdata Electronics
Allicdata Part #:

A2T18H450W19SR6-ND

Manufacturer Part#:

A2T18H450W19SR6

Price: $ 142.39
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: IC TRANS RF LDMOS
More Detail: RF Mosfet LDMOS 1.805GHz ~ 1.88GHz 16.5dB 89W NI...
DataSheet: A2T18H450W19SR6 datasheetA2T18H450W19SR6 Datasheet/PDF
Quantity: 1000
150 +: $ 129.44700
Stock 1000Can Ship Immediately
$ 142.39
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: LDMOS
Frequency: 1.805GHz ~ 1.88GHz
Gain: 16.5dB
Current Rating: --
Noise Figure: --
Power - Output: 89W
Voltage - Rated: 30V
Package / Case: NI-1230S-4S4S
Supplier Device Package: NI-1230S-4S4S
Description

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Transistors - FETs, MOSFETs - RF

The A2T18H450W19SR6 is a type of metal–oxide–semiconductor field-effect transistor (MOSFET), which belongs to the FET family. It has high degree of linearity, low noise, and low current distortion. It is the first choice for use in radio-frequency (RF) applications and can be used in a wide range of frequencies, ranging from HF to VHF.

Application Field

The A2T18H450W19SR6 is designed for applications in RF systems, such as communications systems, TV tuners, FM radio transmitters, and satellite receivers. It can also be used in high-frequency switching circuits.

In addition, it is also suitable for analog and digital base-band signal conditioning applications. The most important benefits that this FET can provide its users are its low noise and high linearity characteristics. It also offers high transconductance, good frequency response, and low power consumption.

Working Principle

The A2T18H450W19SR6 is a type of MOSFET that works on the principle of a field-effect. This type of device consists of two terminal (gate and drain) and two electrodes (source and drain). The gate terminal is used to apply an electric field, which has an effect on the conductivity of the channel through which current flows to the drain. The device has a thin layer of insulation between the gate and the channel, called the gateoxide, which will regulate the flow of current through the channel.

When an input voltage is applied to the gate terminal, it causes current to flow through the channel and to the drain terminal. This type of device is very sensitive to changes in the gate voltage and is capable of operating at high frequencies, making it perfect for use in RF applications. Additionally, it has a small gate capacitance and low power consumption, making it ideal for use in low-power circuits.

Conclusion

The A2T18H450W19SR6 is a type of MOSFET, which belongs to the FET family. It is designed for applications in radio frequency (RF) systems and is the first choice for use in such applications. It is a low noise, high linearity device that is suitable for use in high-frequency switching and signal conditioning applications. Additionally, the device has a thin gate oxide layer and low power consumption.

The specific data is subject to PDF, and the above content is for reference

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