
Allicdata Part #: | A2T18H455W23NR6-ND |
Manufacturer Part#: |
A2T18H455W23NR6 |
Price: | $ 96.15 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | AIRFAST RF POWER LDMOS TRANSISTO |
More Detail: | RF Mosfet LDMOS 31.5V 1.08A 1.805GHz ~ 1.88GHz 14.... |
DataSheet: | ![]() |
Quantity: | 1000 |
150 +: | $ 87.40340 |
Series: | -- |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 1.805GHz ~ 1.88GHz |
Gain: | 14.5dB |
Voltage - Test: | 31.5V |
Current Rating: | 10µA |
Noise Figure: | -- |
Current - Test: | 1.08A |
Power - Output: | 56dBm |
Voltage - Rated: | 65V |
Package / Case: | OM-1230-4L2S |
Supplier Device Package: | OM-1230-4L2S |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Introduction
A2T18H455W23NR6 is an advanced radio frequency (RF) transistor that combines the combined properties of powerful FETs and MOSFETs. It is designed to combine the best features of both devices. This type of transistor is used in many applications, especially in high-frequency (RF) and high-speed applications. This article provides a brief overview of A2T18H455W23NR6 application field and working principle.
Applications
A2T18H455W23NR6 is widely used in many RF, high-speed and high-frequency applications. It has a wide range of applications, from wireless communication to cellular phone antenna amplifiers, from short-distance radio transmission applications to base transceiver station amplifiers. It is also used in RF antennas and RF power amplifiers. It is also used in medical treatments that require precise control of signals and in smart grid technologies.
Its excellent performance enables it to be used in a variety of applications that require high-frequency, high-speed, and high-power performance, such as RF power amplifiers, medical devices, telecommunications systems, automotive electronics, and military applications.
Working Principle
The working principle of A2T18H455W23NR6 is based on the principles of field-effect transistors (FETs) and metal-oxide-semiconductor field-effect transistors (MOSFETs). A2T18H455W23NR6 is equipped with an N-channel silicon on insulator (SOI) gate. N-channel transistors are well-suited for high-speed and high-frequency applications because the channel is electrically isolated from the substrate and gate, allowing for greater control of base current and voltage.
It uses a standard three-terminal configuration, with Vdd and Vss connected to the drain and source pin, respectively. There is also a Vg pin which is used to apply a voltage to the gate which regulates the drain current. As the gate voltage increases, the amount of current passing through the transistor increases.
A2T18H455W23NR6 offers several advantages, including excellent linearity and low noise. This type of transistor is also very reliable and has a very low level of power dissipation. In addition, it has a high breakdown voltage and can operate at extreme temperatures.
Conclusion
In conclusion, A2T18H455W23NR6 is an advanced radio frequency transistor that is used in many high-frequency, high-speed and high-power applications. It has excellent linearity and low noise and is very reliable. A2T18H445W23NR6 is a superior device that offers many advantages over conventional FETs and MOSFETs.
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