A2T18H100-25SR3

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A2T18H100-25SR3 is a transistor belonging to the family of insulated-gate field-effect transistors (IGFETs). It is also commonly known as a metal-oxide-semiconductor field-effect transistor (MOSFET) and a radio-frequency power transistor (RF power transistor). It is designed for use in various RF applications, such as RF signal amplification, signal detection, signal filtering, power amplification, and power management.

The A2T18H100-25SR3 is a wide-bandwidth MOSFET transistor with a low noise figure. It has a low noise figure of 0.5 dB and a wide bandwidth of 6.0–1600 MHz. It is designed to operate in an environment of high temperature, high power, and high RF operation. The A2T18H100-25SR3 is a high-power transistor and is capable of providing up to 100 watts of output power at 25 volts of drain voltage. It is particularly suited for use in high dynamic range power amplifiers, such as those used in cellular base stations or wireless communication systems.

The A2T18H100-25SR3 is a three-terminal device with a gate, a source, and a drain. The gate serves as an input that controls the current flow between the source and the drain. The voltage at the gate controls whether the current flows between the source and the drain. When the voltage at the gate is low, the drain is turned off and no current flows. When the voltage at the gate is high, the drain is turned on, and current flows between the source and the drain. Consequently, the gate voltage is used to control the amount of current that flows between the source and the drain.

The A2T18H100-25SR3 is suitable for applications that require high-power output and wide bandwidth. It is also suitable for use in RF signal detection, filtering, and power management. The wide bandwidth of 6.0 –1600 MHz enables the transistor to work in high-frequency applications, such as 2.4GHz and 5.8GHz systems. The high-power output capability enables it to be used for power amplification in high-power radio systems. The low noise figure of 0.5 dB makes it suitable for use in applications requiring high sensitivity.

In conclusion, the A2T18H100-25SR3 insulated-gate FET transistor is a high-power RF (radio-frequency) transistor designed for use in a variety of RF applications. It has a wide bandwidth of 6.0 –1600 MHz and a low noise figure of 0.5 dB. It is suitable for use in applications requiring high-power output and wide bandwidth, such as 2.4GHz and 5.8GHz systems. Additionally, the low noise figure of 0.5 dB makes it suitable for use in applications requiring high sensitivity.

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