A2T18S160W31GSR3

A2T18S160W31GSR3 is an RF power transistor, developed by Motorola Semiconductor which is now merged with Freescale. It is mainly used in radio frequency power amplifiers in mobile and base station applications. This transistor features small size and low cost, unmatched power performance and superior gain. This transistor can be used in the applications like cellular and paging cell sites, public service radio, market data radio links, gaming systems, radio and TV broadcasting, 2.4 GHz ISM band power amplifiers, industrial and medical RF power applications.

A2T18S160W31GSR3 is a silicon N-channel enhancement mode power MOSFET. It is built with a Silicon-on-Diamond technology, which is highly efficient for the device power performance for high power applications. This transistor can provide a variety of class-A, B, C, D and E amplification at VHF and UHF frequencies. It offers an excellent RF character by minimizing intermodulation distortion and providing superior gain. The output power of this device can reach up to 160W.

This transistor also features low gate-drain capacitance which helps to achieve extremely high frequency switching while maintaining a low off-state drain current. Furthermore, it offers reverse recovery protection which increases its protection against gate drive over-voltage. The gate drive is protected even when the drain voltage is high, therefore allowing the possibility of higher switching frequency.

A2T18S160W31GSR3 operates using the source-follower principle which has several advantages over the traditional source-common or source-gate configurations. The source-follower operation generates a high transfer efficiency with minimal signal distortion, resulting in lower power consumption. The device also has very low drain voltage drop which helps to enhance power efficiency and reduce thermal loss during operation. Additionally, its low operating voltage also reduces power loss.

To ensure reliability and long lifetime, A2T18S160W31GSR3 is provided with thermal protection, low impedance gate-drain, low on-state resistance and current limit. Its temperature range operating of -65°C to 175°C and its tolerance of continuous current at high voltages make it suitable for a variety of applications such as cellular and paging cell sites, public service radio, market data radio links, gaming systems, radio and TV broadcasting, 2.4 GHz ISM band power amplifiers, industrial and medical RF power applications.

In conclusion, A2T18S160W31GSR3 is an RF power transistor that is developed for high power amplifiers in mobile and base station applications. It is built with advanced Silicon-on-Diamond technology which makes it highly efficient for the device power performance and enhances its reliability by providing low operating voltage, low gate-drain capacitance, reverse recovery protection and source-follower configuration. Furthermore, its temperature range operating and tolerance of continuous current at high voltage make it suitable for a variety of applications.