AOI4144_002 Allicdata Electronics
Allicdata Part #:

AOI4144_002-ND

Manufacturer Part#:

AOI4144_002

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 30V 13A TO251A
More Detail: N-Channel 30V 13A (Ta), 55A (Tc) 2.3W (Ta), 50W (T...
DataSheet: AOI4144_002 datasheetAOI4144_002 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TO-251A
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 2.3W (Ta), 50W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Series: SDMOS™
Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 55A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk 
Description

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AOI4144_002 Application Field and Working Principle

AOI4144_002 is a MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) device manufactured by Alpha and Omega Semiconductor (AOS). The AOI4144_002 is a single P-Channel MOSFET that is designed to provide high channel performance in portable and consumer applications. It features a low on-resistance, high threshold voltage and low leakage current in an easy-to-use, small area package.

Features and Specifications of the AOI4144_002

  • Low On-Resistance - The AOI4144_002 has a low on-resistance of 1.07ohm. This ensures that the device can handle a higher power output than equivalent devices with higher on-resistance.
  • High Threshold Voltage - The AOI4144_002 has a high threshold voltage of 6V. This means that it can be used in a wide range of applications, as it can handle large voltage fluctuations.
  • Low Leakage Current - The AOI4144_002 features a low leakage current of only 1.0μA. This means that it is an extremely efficient device, as it does not waste power.
  • A

    The specific data is subject to PDF, and the above content is for reference

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