AOI4C60 Allicdata Electronics
Allicdata Part #:

785-1648-5-ND

Manufacturer Part#:

AOI4C60

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 600V 4A TO-252
More Detail: N-Channel 600V 4A (Tc) 125W (Tc) Through Hole TO-2...
DataSheet: AOI4C60 datasheetAOI4C60 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-251-3 Stub Leads, IPak
Supplier Device Package: TO-251A
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 125W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 950 mOhm @ 1.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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AOI4C60, or Advanced Oxide Insulated 4C60, is a type of insulated gate field-effect transistor (IGFET) designed to be used in high-power DC and AC switching applications. The AOI4C60 is known for its superior electrical insulation and superior reliability and durability compared to other FET and MOSFET technologies. This article will discuss the AOI4C60\'s application field and working principle.

The AOI4C60 is a single-gate FET, meaning it features just one gate. This gate is surrounded by a layer of etched oxide insulation that prevents any electrical charge from affecting the transistor. The construction of the AOI4C60 allows for a higher degree of current flow when compared to other FETs and MOSFETs, resulting in greater speed and efficiency when in use. In addition, the AOI4C60 is also better suited for handling high junction temperatures, meaning that it can remain operational even at higher power levels or with extended durations of power supply.

The AOI4C60\'s primary application field is in high-power switching applications. In particular, it is often used in applications where its superior insulation is required to protect against short-circuiting or other risks during use. In many cases, the AOI4C60 can also be used in motor control applications and other power applications where its higher current-carrying capacities are desired. The AOI4C60 is also commonly used in power amplifiers and power converters, both of which require large amounts of current.

Now that we have discussed the application field of the AOI4C60, let us take a closer look at its working principle. In essence, the AOI4C60 works like any other single-gate field-effect transistor. When a voltage is applied to the gate, it creates an electric field that penetrates the insulation layer and allows for current flow between the source and drain terminals. This current flow can then be used to control power levels or other power-related actions.

The actual amount of current that can be achieved with the AOI4C60 will depend on a number of factors, such as gate voltage, temperature, and other factors. It is also important to note that the AOI4C60 is not as efficient or powerful as other dual-gate FETs or MOSFETs. As such, it may not be ideal for applications that require a high level of power or efficiency.

The AOI4C60 is one of the most reliable and durable single-gate FETs available on the market. It is capable of handling high junction temperatures and provides superior electrical insulation when compared to other FET and MOSFET technologies. This makes the AOI4C60 an ideal choice for high-power DC and AC switching applications as well as motor control applications and power amplifiers and power converters.

The specific data is subject to PDF, and the above content is for reference

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