APT13003EU-G1

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APT13003EU-G1 is a bipolar junction transistor (BJT) that is single in configuration. It is a three-terminal device with two junctions (base-emitter and collector-base) and two current-carrying electrodes (emitter and collector).

BJTs are designed as switching and amplifying devices and are used in a wide range of applications, from low-speed, low-power digital logic circuits to high-speed, high-power switching and amplification as used in radio-frequency circuits. The APT13003EU-G1 is a versatile device that can be used for various applications such as level shift, power amplification, switching, and for driving other transistors.

The APT13003EU-G1 is primarily used in switching circuits or as an amplifier or driver. As a switching device, it is used to turn a signal on and off, or to increase or decrease the level of a signal. As an amplifier, it is used to increase the power of a signal, and as a driver it is used to drive a higher current device.

The APT13003EU-G1 has a maximum power rating of 800mW and a continuous collector current of 5A. The die size is 4.5mm x 4.5mm, the package size is 4.2mm x 4.2mm, and the termination style is SMT. It has a peak gain of 10 and a forward current gain of 100. The operating temperature range is –65°C to +125°C and the maximum junction temperature is +150°C.

The APT13003EU-G1’s working principle is based on the injection of minority carriers from the emitter region into the base region. This creates a current in the collector region, which is amplified and passed to the output circuit. The base-emitter junction acts like a diode and the collector-base junction acts like a switch. When the base-emitter junction is forward biased, the collector current becomes active.

The amount of current that flows through the collector region is determined by the amount of current that is injected into the base region, which is determined by the current gain of the device. The current gain is determined by the ratio of the base current to the collector current and is reported in hFE. The APT13003EU-G1 has a current gain of 100.

In summary, the APT13003EU-G1 is a single bipolar junction transistor (BJT) with a maximum power rating of 800mW, a continuous collector current of 5A, and a peak gain of 10. It is primarily used as a switching or amplifying device in low-power, low-speed digital logic circuits and high-power, high-speed switching and amplification circuits. Its working principle is based on the injection of minority carriers from the emitter region into the base region, which creates a current in the collector region, which is amplified and passed to the output circuit.

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