APT13003SU-G1 Allicdata Electronics
Allicdata Part #:

APT13003SU-G1DI-ND

Manufacturer Part#:

APT13003SU-G1

Price: $ 0.29
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN 450V 1.3A TO126
More Detail: Bipolar (BJT) Transistor NPN 450V 1.3A 4MHz 20W Th...
DataSheet: APT13003SU-G1 datasheetAPT13003SU-G1 Datasheet/PDF
Quantity: 1300
1 +: $ 0.27090
10 +: $ 0.21798
100 +: $ 0.14855
500 +: $ 0.11143
1000 +: $ 0.08358
Stock 1300Can Ship Immediately
$ 0.29
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 1.3A
Voltage - Collector Emitter Breakdown (Max): 450V
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 250mA, 1A
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V
Power - Max: 20W
Frequency - Transition: 4MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126
Description

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The APT13003SU-G1, commonly known as the “G1 Transistor”, is a common transistor used in electronics. It is a single, NPN bipolar junction transistor (BJT) with a maximum rating of 600 volts and 1.0 amp. This type of transistor is capable of handling high voltages and currents efficiently with minimal power dissipation, making it a popular choice for many electronic applications. The G1 is often used in power supplies, amplifiers, and motor control circuits.The G1 Transistor is composed of three major components: an emitter, a base, and a collector. The collector is the output of the transistor, and is responsible for providing the output current. The emitter provides a negative voltage, which is used to control the current flowing through the transistor from the base to the collector. The base is responsible for controlling the current from the emitter to the collector, and is connected to a gate voltage (VGS) to control the transistor’s on/off state.The G1 Transistor works by the principle of minority carrier injection. When a gate voltage (VGS) is applied, it causes the electrons in the base region to move toward the emitter. This creates a depletion layer between the emitter and collector, which affects the current flow between them. By changing the gate voltage, the size of the depletion layer can be altered, also affecting the current flow. By controlling the gate voltage, the output of the transistor can be controlled.The APT13003SU-G1 is a popular choice for many electronics applications due to its versatility and relatively low cost. It is capable of switching very quickly, making it suitable for high-speed communications, such as in digital signal processing circuits. It also has a low power rating, which makes it a great choice for applications that require a high degree of power efficiency. Additionally, it is not very susceptible to damage due to overvoltage, making it well-suited for use in applications which may be exposed to high voltage fluctuations.The G1 Transistor is a very versatile device, and is used in a wide variety of applications. It can be used for switching, amplifying, and controlling the voltage and current output of power supplies, amplifiers, and motor control circuits. It is also used in rectification and protection circuits, as well as instrumentation amplifiers and audio measurement equipment. Additionally, it is often used in Digital Signal Processors (DSPs) to control the clock speed and other functions.Overall, the APT13003SU-G1 is a versatile, easy to use device that can be used in a wide range of high voltage and current applications. Its fast switching capabilities make it ideal for digital signal processing, and its relatively low cost make it a popular choice for many electronics applications.

The specific data is subject to PDF, and the above content is for reference

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