APT13005STF-G1 Allicdata Electronics
Allicdata Part #:

APT13005STF-G1DI-ND

Manufacturer Part#:

APT13005STF-G1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN 450V 3.2A TO220
More Detail: Bipolar (BJT) Transistor NPN 450V 3.2A 4MHz 28W Th...
DataSheet: APT13005STF-G1 datasheetAPT13005STF-G1 Datasheet/PDF
Quantity: 170
Stock 170Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 3.2A
Voltage - Collector Emitter Breakdown (Max): 450V
Vce Saturation (Max) @ Ib, Ic: 1V @ 750mA, 3A
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Power - Max: 28W
Frequency - Transition: 4MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: TO-220F-3
Description

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Bipolar junction transistors, otherwise known as BJTs, are important components for many electrical and electronic applications. They are composed of three layers of semiconductor materials, usually silicon or germanium, sandwiched between two electrodes. Current flow between the two external electrodes, the base and the emitter, is controlled by varying the current flowing through the third electrode, the collector. The APT13005STF-G1, part of a family of single-package transistors, is a low charge-based ultra-100V NPN transistor designed for high-speed switching applications.

This device has a wide variety of applications including switching, drive circuits, and amplifiers in mobile communication, industrial control, and automation applications. It is available in three different configurations – a standard version, a small-signal version, and a high-speed version, each with its own unique features. In addition, the APT13005STF-G1 is designed to be RoHS compliant and has a maximum voltage rating of 100 volts.

The APT13005STF-G1 is optimized for high-speed switching applications. It features ultra-low charge-based PNP turn-on and NPN turn-off times of 0.7 and 1.0 nanoseconds, respectively. This fast switching speed makes it suitable for applications such as switching power FETs, charge pumps, and high-speed motor drive circuits. It also has a high breakdown voltage of 100 volts and a maximum continuous collector current rating of 300mA, which makes it suitable for applications where a high voltage and moderate to high current flow is needed.

The working principle of the APT13005STF-G1 is similar to that of other BJT devices. In the active region, where the base-emitter voltage is sufficiently large, current is allowed to flow between the collector and the emitter. This causes current to flow from the collector to the emitter and vice versa. The amount of current that flows between the collector and the emitter is controlled by the amount of current flowing in the base. The APT13005STF-G1 provides excellent performance for most switching applications due to its fast switching speed and high collector-emitter breakdown voltage.

The APT13005STF-G1 is a high-performance, high-speed switching transistor designed for a variety of applications. With its ultra-fast switching speed, low charge-based switching times, and RoHS compliance, it provides an excellent choice for most switching requirements. Its fast switching speed and high breakdown voltage make it suitable for applications with moderate to high current flow at high voltages. The APT13005STF-G1 is a great choice for many electrical and electronic applications.

The specific data is subject to PDF, and the above content is for reference

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