APT200GN60JG Allicdata Electronics
Allicdata Part #:

APT200GN60JG-ND

Manufacturer Part#:

APT200GN60JG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: IGBT 600V 283A 682W SOT227
More Detail: IGBT Module Trench Field Stop Single 600V 283A 682...
DataSheet: APT200GN60JG datasheetAPT200GN60JG Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Discontinued at Digi-Key
IGBT Type: Trench Field Stop
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 283A
Power - Max: 682W
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 200A
Current - Collector Cutoff (Max): 25µA
Input Capacitance (Cies) @ Vce: 14.1nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Supplier Device Package: ISOTOP®
Description

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APT200GN60JG application field and working principle

The APT200GN60JG module is part of the family of IGBTs, which are semiconductor components known for their high efficiency and improved switching performance. It is an insulated gate bipolar transistor (IGBT) module that is frequently used in power supply applications and power conversion. This particular module is suitable for extremely high switching frequencies, making it a popular choice for power supply applications used in renewable energy generation, electric vehicles, and industrial electrical systems.

The APT200GN60JG module is composed of two insulated gate bipolar transistors (IGBTs) with diode rectifiers. This makes it an efficient module for general use and its insulating casing ensures safety and reliability. The IGBT is designed to switch alternating currents on and off in a fast and reliable manner. It is composed of a gate and two terminals, the emitter and collector, with the latter connected to the external circuit. The IGBT acts as a switch that regulates the flow of current between the emitter and collector; when the voltage applied to the gate is zero, the transistor is opened, meaning that no current flows through the circuit; when a positive voltage is applied to the gate, the transistor closes and the current starts to flow. IGBT transistors are typically used for applications where high currents and switching speeds are required.

The APT200GN60JG module provides numerous benefits, such as its high switching speeds, low switching losses and robustness. It also has a small form factor and is capable of delivering high current up to 200A, making it suitable for a wide range of applications including motor control systems, uninterruptible power supplies, and other power switching applications that require IGBTs at higher current levels. Furthermore, the module has built-in overload protection and under-voltage lockout circuits that can limit the over current and prevent damage to the device caused by high current.

The APT200GN60JG module is an important component for the power conversion process, which is used to create an alternating current from a direct current source in order to power electrical devices. The direct current can be generated from photovoltaic cells, fuel cells, and by recovering energy from natural sources. It works in conjunction with other power converters to provide control to the power generated.

In summary, the APT200GN60JG module is specially designed for high frequency switching in power supply applications. Its high current and mobility allow it to manage high power switches efficiently and reliably. The built-in features provide protection from overcurrent and under-voltage lockout to ensure safe operation. The module is suitable for a wide range of power conversion applications such as those in renewable energy generation, electric vehicles and industrial electrical systems.

The specific data is subject to PDF, and the above content is for reference

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