APT25GP90BDQ1G IGBT 900V 72A 417W TO247 |
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| Allicdata Part #: | APT25GP90BDQ1G-ND |
| Manufacturer Part#: |
APT25GP90BDQ1G |
| Price: | $ 1.63 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | IGBT 900V 72A 417W TO247 |
| More Detail: | IGBT PT 900V 72A 417W Through Hole TO-247 [B] |
| DataSheet: | APT25GP90BDQ1G Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| 60 +: | $ 6.12759 |
Specifications
| Power - Max: | 417W |
| Supplier Device Package: | TO-247 [B] |
| Package / Case: | TO-247-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Test Condition: | 600V, 40A, 4.3 Ohm, 15V |
| Td (on/off) @ 25°C: | 13ns/55ns |
| Gate Charge: | 110nC |
| Input Type: | Standard |
| Switching Energy: | 370µJ (off) |
| Series: | POWER MOS 7® |
| Vce(on) (Max) @ Vge, Ic: | 3.9V @ 15V, 25A |
| Current - Collector Pulsed (Icm): | 110A |
| Current - Collector (Ic) (Max): | 72A |
| Voltage - Collector Emitter Breakdown (Max): | 900V |
| IGBT Type: | PT |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Not For New Designs |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Tube |
Description
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Overview of APT25GP90BDQ1G
The APT25GP90BDQ1G is a type of insulated gate bipolar transistor (IGBT) that is used for a variety of applications in both low- and high-power systems. IGBTs combine the high input impedance and low on-resistance of a MOSFET with the high current capability and low saturation voltage of a bipolar transistor. This makes them ideal for applications such as power switching, motor control, and power factor correction, among others.Features of the APT25GP90BDQ1G
The APT25GP90BDQ1G is a single IGBT that offers a wide range of features, including:- A maximum collector current of 25A.
- A maximum collector-emitter voltage rating of 90V.
- A maximum collector-emitter saturation voltage of 1.2V.
- An operating temperature range of -40 degrees C to 150 degrees C.
- A higher switching speed than other IGBTs.
- A lead-free, RoHS compliant design.
- Low coupling capacitance.
- Low noise generation.
Applications of the APT25GP90BDQ1G
The APT25GP90BDQ1G can be used in a variety of applications, such as:- Lighting and LED dimming.
- Inverter drives.
- Power supplies.
- Uninterruptible power supplies.
- Motor control.
- Power factor correction.
- Switched mode power supplies.
Working Principle of the APT25GP90BDQ1G
The APT25GP90BDQ1G is an NPN-type IGBT, which means that the high-voltage (collector) terminal is connected to the N-type layer, and the low-voltage (emitter) terminal is connected to the P-type layer. With no current applied, the transistor is in an “off” state, which means that no current is flowing through it.When a voltage is applied to the Gate terminal of the IGBT, the voltage may drive electrons from the N-type layer to the P-type layer. This forms a conducting path between the collector and emitter, and allows current to flow.When the voltage is removed, the electrons are forced back to the N-type layer, and the transistor’s conductive path is broken again. This is how the APT25GP90BDQ1G acts as a switch for controlling power flow in the system.Conclusion
The APT25GP90BDQ1G is a single IGBT that offers a wide range of features and can be used in a variety of applications, such as lighting and LED dimming, inverter drives, power supplies, and uninterruptible power supplies, among others. Its working principle is based on the NPN type of IGBT, in which a voltage applied to the Gate terminal can form a conductive path between the collector and emitter and allow current to flow.The specific data is subject to PDF, and the above content is for reference
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APT25GP90BDQ1G Datasheet/PDF