Allicdata Part #: | APT22F100J-ND |
Manufacturer Part#: |
APT22F100J |
Price: | $ 23.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 1000V 23A SOT-227 |
More Detail: | N-Channel 1000V 23A (Tc) 545W (Tc) Chassis Mount I... |
DataSheet: | APT22F100J Datasheet/PDF |
Quantity: | 1000 |
20 +: | $ 20.91130 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | SOT-227-4, miniBLOC |
Supplier Device Package: | ISOTOP® |
Mounting Type: | Chassis Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 545W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 9835pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 305nC @ 10V |
Series: | POWER MOS 8™ |
Rds On (Max) @ Id, Vgs: | 380 mOhm @ 18A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 23A (Tc) |
Drain to Source Voltage (Vdss): | 1000V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The APT22F100J transistor is a type of field effect transistor (FET) that is typically used to supply current to circuits in an electronic device. It is a single type FET, meaning it has only one terminal (the gate) that is used to control the flow of current through the device. The APT22F100J is a popular choice due to its low voltage requirement and wide temperature range. In this article, we’ll discuss the application field and working principle of the APT22F100J.
The APT22F100J is commonly found in switching applications, including power electronics and telecommunications. It is designed to handle high voltage and current levels and withstand high temperature extremes. The low voltage and high switching speed of the device make it highly reliable and efficient. It is commonly used in DC-DC converters, motor drives, and battery management systems.
The working principle of the APT22F100J is based on the phenomenon known as the ‘channel effect’. When an appropriate voltage is applied to the gate of the device, an electric field is created that causes a ‘channel’ to form between the source and the drain. The electric field modulates the conductivity of this channel, allowing current to flow between the terminals. The current that flows through the channel is impacted by the voltage applied to the gate and can be controlled with precision.
The APT22F100J is also capable of providing a form of electrical feedback. This occurs when the current flowing through a device is detected by the gate and is used to adjust the gate voltage accordingly. This type of feedback is commonly used in systems that require highly precise control.
The main advantage of the APT22F100J is its wide temperature range. It is designed to operate efficiently in temperatures ranging from -55°C to +175°C. This allows it to be used in extreme environments, including automotive and aerospace applications.
The APT22F100J is also highly reliable and efficient. It has a maximum on-state resistance (RDS(on)) of only 17 mΩ, allowing it to provide high current levels with very low losses. This makes it well-suited for applications where high efficiency is required.
In summary, the APT22F100J is a field effect transistor designed for high voltage and current applications. It is capable of providing precise electrical feedback and operates over a wide range of temperatures. The device is highly reliable and efficient, making it a popular choice for power electronics and telecommunications systems.
The specific data is subject to PDF, and the above content is for reference
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