APT200GN60B2G

Test Condition:	400V, 200A, 1 Ohm, 15V
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Series:	--
Packaging:	Tube
Lead Free Status / RoHS Status:	--
Part Status:	Active
Moisture Sensitivity Level (MSL):	--
IGBT Type:	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):	600V
Current - Collector (Ic) (Max):	283A
Current - Collector Pulsed (Icm):	600A
Vce(on) (Max) @ Vge, Ic:	1.85V @ 15V, 200A
Power - Max:	682W
Switching Energy:	13mJ (on), 11mJ (off)
Input Type:	Standard
Gate Charge:	1180nC
Td (on/off) @ 25°C:	50ns/560ns

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Transistors - IGBTs - Single

IGBTs, or insulated-gate bipolar transistors, are three-terminal devices composed of a FET (Field Effect Transistor) and a bipolar junction transistor (BJT). They are widely used in the power electronics industry both as individual devices and in integrated circuits. The APT200GN60B2G is a single-phase IGBT designed for use in applications such as reversing motors, welding systems, and DC-DC converters.

Overview

The APT200GN60B2G is a 600 V 30 A IGBT with a 7.4 mΩ typical collector-emitter saturation voltage. It has a maximum collector-emitter voltage of 600 V and a maximum collector current of 30 A. It is rated for continuous operation at temperatures up to 175°C. The gate voltage for turn-on is 10 V and for turn-off it is 7 V. The gate-emitter voltage is 5 V.

Applications

The APT200GN60B2G is commonly used in applications such as AC/DC converters, DC/DC converters, range extenders, welding systems, and reversing motors. It is designed to minimize switching losses, thereby improving efficiency and power density. Its high energy yields are suitable for high speed and high current switching, allowing it to be used in ultra-high performance industrial drives.

Working Principle

The APT200GN60B2G is a three-terminal device that uses the combined properties of both FET and BJT. The FET section forms a gate-controlled switch and the BJT section provides the current gain. Each side of the single-phase IGBT consists of a parallel connection of five FET and one BJT.When the gate bias is reversed with respect to the base of the BJT, it turns the IGBT “on” and current begins to flow from the collector to the emitter. When the IGBT is “on,” the reverse current through the FET section and the BJT section is blocked, allowing a low-resistance connection between the collector and emitter. When the gate bias is switched back to the original state, the IGBT turns “off” and the current between the collector and emitter is blocked.

Conclusion

The APT200GN60B2G is a single-phase IGBT that combines the characteristics of a FET and a BJT. With its high energy yields, low collector-emitter saturation voltage, and low gate-emitter voltage, it is highly suitable for high-speed and high-current switching applications. These features make it ideal for industrial drives, AC/DC converters, DC/DC converters, range extenders, welding systems, and reversing motors. Thus the APT200GN60B2G can be used in a wide variety of applications across different industries.

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