APT25GT120BRG Discrete Semiconductor Products

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APT25GT120BRG application field and working principle

APT25GT120BRG transistor is a device from the family of IGBTs (Insulated Gate Bipolar Transistors) known as “Single” IGBTs. The device is an N-Channel MOSFET (Field Effect Transistor) equipped with two bipolar cells (NPN and PNP) that interact to offer a high voltage level consisting of three separate levels of current flow.

The main purpose of the APT25GT120BRG is to be applied in the power electronics industry and in particular in final phase applications. It can be applied to motor drives, lighting, home appliances and industrial equipment, making the power conversion process more efficient compared to other types of transistors used in the same applications.

The APT25GT120BRG can be used as a switch transistor. To function properly, a voltage must be applied at its dedicated terminals. This will act as a command signal and will turn on the differently-leveled currents when it reaches the threshold level. A voltage source is connected to the collectors of the two bipolar cells included in the transistor. Applied to these writers, the transistor will block the positive current flow when the applied voltage is lower than the device’s breakdown voltage. It can therefore be seen as a negative voltage supply protection.

The APT25GT120BRG can either be activated by a gate-source voltage (Vgs) or by a base - emitter current (Ic). The most common approach is to apply a gate source voltage as it provides better control of the switching times. To switch from one state to the other state, a gate - source x 300 mV signal is used. When this voltage reaches the device’s threshold, the transistor switches its state to on. If the gate-source voltage is too low, the device will remain in the off state.

The APT25GT120BRG transistor is designed to provide excellent performance in terms of surge current capabilities, minimizing losses and reducing the switching time. This is possible because the APT25GT120BRG is equipped with a ferrite core, which prevents the effects of stray inductance. This also enables the device to reduce conduction losses and minimize switching delays by reducing the damping effect of the parasitic inductance.

The APT25GT120BRG transistor is ideal for applications that require a high frequency of switching such as variable speed drive controllers, audio amplifiers, power supplies and the like. Its high temperature capabilities make it suitable for applications that require regular high temperature operation, such as driving industrial motors.

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