APT24M80S Discrete Semiconductor Products |
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Allicdata Part #: | APT24M80S-ND |
Manufacturer Part#: |
APT24M80S |
Price: | $ 8.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 800V 25A D3PAK |
More Detail: | N-Channel 800V 25A (Tc) 625W (Tc) Surface Mount D3... |
DataSheet: | APT24M80S Datasheet/PDF |
Quantity: | 1000 |
60 +: | $ 7.24584 |
Series: | POWER MOS 8™ |
Packaging: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 800V |
Current - Continuous Drain (Id) @ 25°C: | 25A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 390 mOhm @ 12A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 150nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 4595pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 625W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D3Pak |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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APT24M80S is a highly integrated, low on-resistance, high withstand voltage, N-channel MOS field effect transistor (MOSFET). It is widely used in the fields of electrical and automation, telecommunications, and industrial control. The device features a voltage range of up to 24 volts, an on resistance of 0.8 ohms, and a high breakdown voltage of 200 volts. The device is also equipped with gate protection, which eliminates the need for separate protective networks. It is an attractive choice for a wide range of applications, including power switching, power switching, automotive power electronics, and DC/DC servers.
The APT24M80S is an N-channel MOSFET that can be operated in either enhancement or depletion mode. In enhancement mode, the transistor is disabled when the gate-source voltage is lower than the threshold voltage. When the voltage is greater than the threshold voltage, the transistor is enabled, allowing current to flow from the drain to the source. When the gate-source voltage is set to zero, the transistor is in cutoff mode and no current flows through the device.
In depletion mode, the transistor is enabled when the gate-source voltage is greater than the threshold voltage. When the voltage is lower than the threshold voltage, the transistor is disabled and no current flows from drain to source. The gate-source voltage must be adjusted to the required operating voltage such that the transistor is enabled and current can flow through it.
The APT24M80S is an excellent choice for a variety of applications, including power switching and automotive power electronics. It is an ideal choice for DC to DC converters in mobile devices and computer peripherals, as well as for automotive power converters and off-shore drilling power generation systems. The device also features gate protection, which eliminates the need for a separate network to protect the transistor from voltage spikes and high currents. The device also features a low on-resistance and high breakdown voltage, making it an attractive choice for a wide range of applications.
The APT24M80S is a versatile device that is capable of handling high currents and high frequencies. It can operate at frequencies up to 500 kHz and can handle currents up to 5 amperes. The device is also capable of handling high voltages, up to 200 volts for continuous operation and up to 250 volts for surges. The device is also robust and reliable, making it an excellent choice for use in applications such as motor control, lighting control, and automotive power electronics.
In summary, the APT24M80S is a highly integrated, low on-resistance, high withstand voltage, N-channel MOSFET. It is an ideal choice for a variety of applications, including power switching, automotive power electronics, DC/DC servers, and off-shore drilling power generation systems. The device features a low on-resistance, high breakdown voltage, and gate protection, and is capable of operating at high frequencies and handling high currents and voltages. The device is an attractive choice for a number of applications, making it an ideal choice for engineers looking for a versatile solution.
The specific data is subject to PDF, and the above content is for reference
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