Allicdata Part #: | APT25GR120BD15-ND |
Manufacturer Part#: |
APT25GR120BD15 |
Price: | $ 6.10 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT 1200V 75A 521W TO247 |
More Detail: | IGBT NPT 1200V 75A 521W Through Hole TO-247 |
DataSheet: | APT25GR120BD15 Datasheet/PDF |
Quantity: | 120 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | $ 5.55030 |
10 +: | $ 4.99464 |
25 +: | $ 4.55062 |
100 +: | $ 4.10672 |
250 +: | $ 3.77378 |
500 +: | $ 3.44078 |
1000 +: | $ 2.99681 |
Series: | -- |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | NPT |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 75A |
Current - Collector Pulsed (Icm): | 100A |
Vce(on) (Max) @ Vge, Ic: | 3.2V @ 15V, 25A |
Power - Max: | 521W |
Switching Energy: | 742µJ (on), 427µJ (off) |
Input Type: | Standard |
Gate Charge: | 203nC |
Td (on/off) @ 25°C: | 16ns/122ns |
Test Condition: | 600V, 25A, 4.3 Ohm, 15V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 |
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APT25GR120BD15 Application Field and Working Principle
APT25GR120BD15 is a high-voltage Insulated Gate Bipolar Transistor (IGBT) module. It is a single chip IGBT module with a maximum blocking voltage of 1200V and a collector-emitter current rating of 25A. The module is designed for use in power supplies, motor control, UPS systems, inverters, and other applications where a digital circuit is needed to control high voltage loads.
The APT25GR120BD15 module consists of a silicon IGBT chip, a diode, a snubber capacitor, and a current limiting resistor on a single isolated lead frame package. The IGBT chip provides both high blocking capability and low switching losses. The diode and snubber components together increase the life and reduce the EMI and erease-on-rating. The current limiting resistor also limits the current in any direction to 0.6A.
The APT25GR120BD15 module has a wide operating temperature range of - 40°C to + 125°C and a storage temperature range of - 40°C to + 125°C. The device can withstand high voltage transients up to 5KV. RC noise filtering is implemented on the IGBT chip to reduce switching noise. The module is self-extinguishing, VDE, UL, CSA and CQC approved, and offers up to 60kHz switching speeds.
The basic working principle of the APT25GR120BD15 IGBT module is to use the electrical isolation between the IGBT gate and the collector-emitter path to control the conduction of the high voltage load. A voltage applied to the gate creates a field between the gate and the collector-emitter channel, which in turn increases the current flow in the channel. By controlling the gate voltage, the IGBT can be turned on or off, thus controlling the load. The diode allows for the current flow in one direction and the snubber capacitor is used to reduce the high frequency transient noise.
The APT25GR120BD15 module is an excellent choice for switching high-voltage and current applications. Its wide voltage and temperature range, high switching speeds, self-extinguishing and noise filtering capabilities, makes it perfect for a variety of applications.
Overall, the APT25GR120BD15 is a great IGBT module for managing high voltage and current applications in digital circuits. It is designed to work efficiently, with a wide temperature and voltage range and high switching speeds, and is UL, CSA and CQC approved, making it a great choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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