APT20GF120BRDQ1G

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The APT20GF120BRDQ1G is a reflective planar IGBT device in the single transistor range. It is part of a PowerMESH family of devices which have a low-on-resistance MOSFET and an integrated fast body diode. This has been developed to provide a cost effective solution for efficient power conversion, inverters and motor control applications. This device also has the capability to provide higher efficiency and higher power density than traditional discrete IGBTs.

The APT20GF120BRDQ1G is optimised for high current applications, featuring a low collector-emitter saturation voltage of 2.8V. It is rated for an avalanche energy of 150mJ (RBSOA)and a common emitter breakdown voltage of 1200V. The device consists of three terminals, the collector and emitter (contacts C, E) and the gate connection (G). The gate current is typically 1-10mA and the gate voltage is 5-7V. The device offers an excellent switching efficiency with a maximum temperature rise of 75 ℃C.

The main application fields for the APT20GF120BRDQ1G include automotive and industrial applications such as motor drives, UPS systems, small inverters and resonant converters. It is also suitable for power supplies, lighting and SMPS applications. The APT20GF120BRDQ1G is ideal for applications which require fast switching and high-current carrying capability, such as DC servo motors, adjustable frequency drives and digital power supplies.

The working principle of the APT20GF120BRDQ1G device is based on the use of a Gate Oxide and N-Type and P-Type layers. The N-Type and P-type layers, known as the Base and Emitter, are the two terminals of the device. The simple electro-mechanical operation occurs when a voltage is applied between the base and emitter terminals, creating a small current flow. This process is known as the ‘collector-emitter’ current gain. The Gate Oxide is an insulating layer which prevents the current from passing directly from the base to the emitter.

When a positive voltage is applied to the Gate terminal, the Gate Oxide layer is broken down and the current is allowed to flow from the collector to the emitter. This causes a reduction in the Collector-Emitter voltage, which is known as the ‘Saturation Voltage’. The Saturation Voltage is a measure of the efficiency of the device and is used to determine the power output of the device. The Gate Oxide layer also has a unique ability to absorb and store the energy from the collector current which helps to reduce the parasitic elements of the device while offering higher energy efficiency.

In conclusion, the APT20GF120BRDQ1G device is an ideal solution for high current applications due to its low on-resistance and low saturation voltage properties. The device provides an excellent switching efficiency and can be used in a variety of applications such as automotive and industrial applications. The device utilizes a Gate Oxide layer which helps to reduce the parasitic elements of the device, resulting in high efficiency and power density.

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