APT20M45BVFRG Allicdata Electronics
Allicdata Part #:

APT20M45BVFRG-ND

Manufacturer Part#:

APT20M45BVFRG

Price: $ 8.79
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET N-CH 200V 56A TO-247
More Detail: N-Channel 200V 56A (Tc) 300W (Tc) Through Hole TO-...
DataSheet: APT20M45BVFRG datasheetAPT20M45BVFRG Datasheet/PDF
Quantity: 1000
60 +: $ 7.91574
Stock 1000Can Ship Immediately
$ 8.79
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4860pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
Series: POWER MOS V®
Rds On (Max) @ Id, Vgs: 45 mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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APT20M45BVFRG is a single MosFet transistor produced by the semiconductor company Apex. It is an N-channel type MoS2-based field-effect transistor. This is a relatively new technology that offers superior performance in terms of on-state conductivity and current and temperature ranges. This type of transistor can be used in a number of applications where extremely low power consumption, thermal design, and high frequency switching are critical.

Applications

APT20M45BVFRG is most commonly used in high-current switching applications. This could include the DC-DC converters used in automotive and consumer electronics applications, AC motor control circuits, high-current relays, motor controllers, and motor command applications. It can also be used in high-current limiters and in power MOSFETs.

This device can also be used in other applications such as power factor correction, power supply design, high-voltage power transistors, high-voltage secondary switching, and ultra-low power switching circuits. It can also be used as a component in low-noise microphones, amplifiers, and audio loudspeakers.

Working Principle

The working principle of the device is based on a field-effect gate (FEG) system. The gate is a thin film of silicon dioxide or carbon nanotubes that is used to control the flow of electrons between the source and drain terminals. When the gate is negatively biased, electrons pass through the gate and are collected by the drain terminal. When the gate is positively biased, the electrons are blocked and the current flow stops.

The main advantage of this type of device is its exceptional on-state conductivity, which can be up to 10,000 times that of any other available silicon MOSFET device. Moreover, the device can operate over a wide range of temperatures and can handle higher currents than other devices. It has a good thermal design and can also be used in high frequency switching applications.

Conclusion

APT20M45BVFRG is a single MosFet transistor that offers superior performance in terms of on-state conductivity and current and temperature ranges. It has a wide range of applications, including high-current switching, motor command applications, power factor correction, and audio loudspeakers. The device utilizes a FEG system in which the gate is used to control the flow of electrons between the source and drain terminals. Furthermore, this type of device also has an excellent thermal design and can be used in high-frequency switching applications.

The specific data is subject to PDF, and the above content is for reference

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