Allicdata Part #: | APT20M45BVFRG-ND |
Manufacturer Part#: |
APT20M45BVFRG |
Price: | $ 8.79 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 200V 56A TO-247 |
More Detail: | N-Channel 200V 56A (Tc) 300W (Tc) Through Hole TO-... |
DataSheet: | APT20M45BVFRG Datasheet/PDF |
Quantity: | 1000 |
60 +: | $ 7.91574 |
Series: | POWER MOS V® |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200V |
Current - Continuous Drain (Id) @ 25°C: | 56A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 45 mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 195nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 4860pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 300W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247 [B] |
Package / Case: | TO-247-3 |
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APT20M45BVFRG is a single MosFet transistor produced by the semiconductor company Apex. It is an N-channel type MoS2-based field-effect transistor. This is a relatively new technology that offers superior performance in terms of on-state conductivity and current and temperature ranges. This type of transistor can be used in a number of applications where extremely low power consumption, thermal design, and high frequency switching are critical.
Applications
APT20M45BVFRG is most commonly used in high-current switching applications. This could include the DC-DC converters used in automotive and consumer electronics applications, AC motor control circuits, high-current relays, motor controllers, and motor command applications. It can also be used in high-current limiters and in power MOSFETs.
This device can also be used in other applications such as power factor correction, power supply design, high-voltage power transistors, high-voltage secondary switching, and ultra-low power switching circuits. It can also be used as a component in low-noise microphones, amplifiers, and audio loudspeakers.
Working Principle
The working principle of the device is based on a field-effect gate (FEG) system. The gate is a thin film of silicon dioxide or carbon nanotubes that is used to control the flow of electrons between the source and drain terminals. When the gate is negatively biased, electrons pass through the gate and are collected by the drain terminal. When the gate is positively biased, the electrons are blocked and the current flow stops.
The main advantage of this type of device is its exceptional on-state conductivity, which can be up to 10,000 times that of any other available silicon MOSFET device. Moreover, the device can operate over a wide range of temperatures and can handle higher currents than other devices. It has a good thermal design and can also be used in high frequency switching applications.
Conclusion
APT20M45BVFRG is a single MosFet transistor that offers superior performance in terms of on-state conductivity and current and temperature ranges. It has a wide range of applications, including high-current switching, motor command applications, power factor correction, and audio loudspeakers. The device utilizes a FEG system in which the gate is used to control the flow of electrons between the source and drain terminals. Furthermore, this type of device also has an excellent thermal design and can be used in high-frequency switching applications.
The specific data is subject to PDF, and the above content is for reference
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