| Allicdata Part #: | APT25GN120BG-ND |
| Manufacturer Part#: |
APT25GN120BG |
| Price: | $ 5.66 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | IGBT 1200V 67A 272W TO247 |
| More Detail: | IGBT Trench Field Stop 1200V 67A 272W Through Hole... |
| DataSheet: | APT25GN120BG Datasheet/PDF |
| Quantity: | 13 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| 1 +: | $ 5.14710 |
| 10 +: | $ 4.63050 |
| 25 +: | $ 4.21873 |
| 100 +: | $ 3.80715 |
| 250 +: | $ 3.49847 |
| 500 +: | $ 3.18979 |
| 1000 +: | $ 2.77820 |
| Power - Max: | 272W |
| Supplier Device Package: | TO-247 [B] |
| Package / Case: | TO-247-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Test Condition: | 800V, 25A, 1 Ohm, 15V |
| Td (on/off) @ 25°C: | 22ns/280ns |
| Gate Charge: | 155nC |
| Input Type: | Standard |
| Switching Energy: | 2.15µJ (off) |
| Series: | -- |
| Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 25A |
| Current - Collector Pulsed (Icm): | 75A |
| Current - Collector (Ic) (Max): | 67A |
| Voltage - Collector Emitter Breakdown (Max): | 1200V |
| IGBT Type: | Trench Field Stop |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Tube |
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The IGBT is a three-terminal power semiconductor device, noted for its high efficiency, high frequency operation and high immunity to electrical noise. One of the most popular IGBTs is the APT25GN120BG which is suitable for high frequency power applications in industrial, automotive, consumer and commercial equipment. This article will discuss the application fields and working principles of the APT25GN120BG.The APT25GN120BG is a high voltage, high frequency IGBT designed for bipolar applications. It is capable of handling up to 25 amp electrical current and is capable of withstanding voltages up to 1200V. This means that it is suitable for applications in industrial and automotive equipment, as well as consumer and commercial equipment. The APT25GN120BG is also notable for its low thermal resistance, which makes it suitable for operation in high temperature environments. In addition, the device has superior switching loss performance and minimal noise operation. This makes it ideal for a variety of power applications, where high performance and low noise levels are required.The APT25GN120BG is a single IGBT device, which means that it is composed of only one transistor. The device uses a vertical power transistor structure which uses two vertical layers of insulation for its gate-emitter structure. This structure helps to provide the device with an extremely low on-state resistance, high switching speeds, and low gate capacitance. The working principle of the APT25GN120BG involves the use of a gate injection transistor (GIT) to control the operation of the device. When an appropriate voltage is applied to the gate, the GIT will inject charge carriers into the channel region. This will cause the voltage on the gate to increase, which will in turn cause the channel to become conductive. Once the channel is conductive, the IGBT will be able to pass current between its emitter and collector terminals. In summary, the APT25GN120BG is suitable for high frequency power applications in industrial, automotive, consumer and commercial equipment. It is capable of handling up to 25 amp electrical current and can withstand voltages up to 1200V. The device also has low thermal resistance, superior switching loss performance and minimal noise operation. The APT25GN120BG is a single IGBT device, using a vertical power transistor structure and a gate injection transistor to control the operation of the device.
The specific data is subject to PDF, and the above content is for reference
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APT25GN120BG Datasheet/PDF