APT94N65B2C3G

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APT94N65B2C3G is a part of the Power MOSFETs category. It is a part of the APT94N65 family which belongs to Alpha and Omega Semiconductor\'s (AOS) ActiveDIAL product line. The device is a Power MOSFET that is manufactured using Alpless process which is based on its advanced vertical DMOS technology. It is a single N-channel MOSFET which has ultra-low on-resistance characteristics combined with extremely high transconductance and superior thermal performance.

The maximum drain current (Id) of APT94N65B2C3G is 65 Amps. It has a drain-Source breakdown voltage (BVDSS) of 54 Volts. Its RDS(on) parameters which include 10V gate driver and at temperature of 25°C is 0.020 Ohms. It is also designed to operate at 100% UIS testing. Its total gate charge (Qg) is 7.80 nC and gate turn-On voltage (VgTOn) is +1.7V. This MOSFET isdesigned for operation at a drain-source voltage (VDS) of 18V and will not require an additional gate voltage to maintain the device in Turn-On condition. It has a total gate-drain capacitance (Qgd) of 1 pF. It is available in a D-Pak package, which is RoHS Compliant.

APT94N65B2C3G has a wide range of applications including automotive, consumer and industrial. It can be used in high- and low-side switching applications such as: HID, LED lighting, DC/DC converters, DC/AC inverters, motor drivers, and battery-management systems.

APT94N65B2C3G works on the principle of the electrical field effect, where free charge carriers (electrons) are provided by an external voltage source. When the input voltage surpasses a threshold voltage, the transistor will turn on and can control the flow of current between the source and the drain terminals. The MOSFET also has an internal gate dielectric which helps to ensure that the transistor remains off in the absence of voltage or a very low voltage. When the external voltage is applied to the gate terminal, the potential of the gate electrode increases and the gap between the gate and the semiconductor will reduce. This allows electrons from the body region to become injected into the gate electrode and form a channel between the source and the drain. When the voltage on the gate is increased further, the gate attracts more carriers from the channel and increases the channel which causes current to flow from the source to the drain.

The switching characteristics of APT94N65B2C3G make it a suitable choice for high-speed switching applications. Its high transconductance and low capacitance result in fast turn-on and turn-off time. This makes it a suitable choice for applications such as computer power supplies and switching power supplies. Its low on-resistance also ensures minimal power losses.

In conclusion, APT94N65B2C3G is a single N-channel MOSFET which has wide range of application due to its superior thermal performance and fast switching characteristics. Its low on-resistance, high transconductance, and low capacitance make it suitable for high-speed switching applications such as modem switching, telecommunications, and high-amperage DC-DC power supplies.

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