Allicdata Part #: | APT9M100B-ND |
Manufacturer Part#: |
APT9M100B |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 1000V 9A TO-247 |
More Detail: | N-Channel 1000V 9A (Tc) 335W (Tc) Through Hole TO-... |
DataSheet: | APT9M100B Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 1mA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 [B] |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 335W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2605pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 80nC @ 10V |
Series: | POWER MOS 8™ |
Rds On (Max) @ Id, Vgs: | 1.4 Ohm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Tc) |
Drain to Source Voltage (Vdss): | 1000V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The APT9M100B is a versatile insulated-gate field effect transistor (IGFET) designed to offer a variety of operating modes and applications. As a single-gate MOSFET device, it can be used in a wide range of applications that require variable voltage, current, and power control. This article will discuss the application fields and working principles of the APT9M100B.
The APT9M100B is particularly well-suited for fast switching applications due to its high-frequency characteristics. These characteristics permit the device to switch quickly between two voltage states. As a result, the APT9M100B can be used in a variety of applications such as motor controllers, switchmode power supplies, chip selectors, logic drivers, and sensing circuits. The APT9M100B is also ideal for high-efficiency applications since its threshold and on-resistance characteristics make it very efficient in terms of power dissipation.
In terms of its operating principle, the APT9M100B is generally considered to be a combination of a metal oxide semiconductor (MOS) FET and a junction field effect transistor (JFET). A MOSFET is composed of two metal plates that are insulated by an oxide layer. A JFET, on the other hand, consists of two gates separated by a PN junction. By combining these two devices, the APT9M100B offers several advantages in terms of performance and power efficiency.
The main application of the APT9M100B is its ability to control the gate voltage of a MOSFET device. In order to understand how this works, it is important to understand the basic operation of a MOSFET. A MOSFET consists of a source, a drain, and a gate. Applying a voltage to the gate will cause the MOSFET to switch between two voltage states. The APT9M100B can be used to precisely control the voltage applied to the gate of the MOSFET, thereby controlling the switching speed and performance of the device.
In addition, the APT9M100B can be used to perform switching functions such as level shifting and pulse width modulation. Level shifting involves changing the voltage from one level to another, while pulse width modulation (PWM) involves controlling the duty cycle of an output signal by varying the width of the pulses. The APT9M100B is also commonly used as a driver for LED lighting, as it can be used to regulate the brightness and color of LED bulbs. The APT9M100B can also be used as a digital logic driver, as it can be used to control the logic levels of digital signals.
Overall, the APT9M100B is a versatile single-gate MOSFET device with excellent performance characteristics. It is well-suited for high-frequency switching applications and power-efficient operation. Its ability to precisely control the voltage applied to the gate of a MOSFET makes it ideal for various applications such as motor controllers, switchmode power supplies, chip selectors, logic drivers, and sensing circuits. In addition, its level shifting and PWM capabilities make it a suitable choice for controlling LED lighting and digital logic signals.
The specific data is subject to PDF, and the above content is for reference
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