APT9M100B Allicdata Electronics
Allicdata Part #:

APT9M100B-ND

Manufacturer Part#:

APT9M100B

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET N-CH 1000V 9A TO-247
More Detail: N-Channel 1000V 9A (Tc) 335W (Tc) Through Hole TO-...
DataSheet: APT9M100B datasheetAPT9M100B Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 5V @ 1mA
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 335W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2605pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Series: POWER MOS 8™
Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The APT9M100B is a versatile insulated-gate field effect transistor (IGFET) designed to offer a variety of operating modes and applications. As a single-gate MOSFET device, it can be used in a wide range of applications that require variable voltage, current, and power control. This article will discuss the application fields and working principles of the APT9M100B.

The APT9M100B is particularly well-suited for fast switching applications due to its high-frequency characteristics. These characteristics permit the device to switch quickly between two voltage states. As a result, the APT9M100B can be used in a variety of applications such as motor controllers, switchmode power supplies, chip selectors, logic drivers, and sensing circuits. The APT9M100B is also ideal for high-efficiency applications since its threshold and on-resistance characteristics make it very efficient in terms of power dissipation.

In terms of its operating principle, the APT9M100B is generally considered to be a combination of a metal oxide semiconductor (MOS) FET and a junction field effect transistor (JFET). A MOSFET is composed of two metal plates that are insulated by an oxide layer. A JFET, on the other hand, consists of two gates separated by a PN junction. By combining these two devices, the APT9M100B offers several advantages in terms of performance and power efficiency.

The main application of the APT9M100B is its ability to control the gate voltage of a MOSFET device. In order to understand how this works, it is important to understand the basic operation of a MOSFET. A MOSFET consists of a source, a drain, and a gate. Applying a voltage to the gate will cause the MOSFET to switch between two voltage states. The APT9M100B can be used to precisely control the voltage applied to the gate of the MOSFET, thereby controlling the switching speed and performance of the device.

In addition, the APT9M100B can be used to perform switching functions such as level shifting and pulse width modulation. Level shifting involves changing the voltage from one level to another, while pulse width modulation (PWM) involves controlling the duty cycle of an output signal by varying the width of the pulses. The APT9M100B is also commonly used as a driver for LED lighting, as it can be used to regulate the brightness and color of LED bulbs. The APT9M100B can also be used as a digital logic driver, as it can be used to control the logic levels of digital signals.

Overall, the APT9M100B is a versatile single-gate MOSFET device with excellent performance characteristics. It is well-suited for high-frequency switching applications and power-efficient operation. Its ability to precisely control the voltage applied to the gate of a MOSFET makes it ideal for various applications such as motor controllers, switchmode power supplies, chip selectors, logic drivers, and sensing circuits. In addition, its level shifting and PWM capabilities make it a suitable choice for controlling LED lighting and digital logic signals.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "APT9" Included word is 10
Part Number Manufacturer Price Quantity Description
APT95GR65B2 Microsemi Co... 7.83 $ 60 IGBT 650V 208A 892W T-MAX...
APT94N60L2C3G Microsemi Co... -- 20 MOSFET N-CH 600V 94A TO26...
APT9F100S Microsemi Co... 0.0 $ 1000 MOSFET N-CH 1000V 9A D3PA...
APT94N65B2C6 Microsemi Co... 14.75 $ 1000 MOSFET N-CH 650V 95A T-MA...
APT94N65B2C3G Microsemi Co... -- 1000 MOSFET N-CH 650V 94A TO-2...
APT9M100B Microsemi Co... 0.0 $ 1000 MOSFET N-CH 1000V 9A TO-2...
APT95GR65JDU60 Microsemi Co... 0.0 $ 1000 INSULATED GATE BIPOLAR TR...
APT97N65LC6 Microsemi Co... -- 1000 MOSFET N-CH 650V 97A TO-2...
APT90DR160HJ Microsemi Co... 11.84 $ 1000 DIODE MODULE 1.6V SOT227B...
APT9F100B Microsemi Co... -- 1000 MOSFET N-CH 1000V 9A TO-2...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics