Allicdata Part #: | APT97N65LC6-ND |
Manufacturer Part#: |
APT97N65LC6 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 650V 97A TO-264 |
More Detail: | N-Channel 650V 97A (Tc) 862W (Tc) Through Hole TO-... |
DataSheet: | APT97N65LC6 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3.5V @ 2.96mA |
Package / Case: | TO-264-3, TO-264AA |
Supplier Device Package: | TO-264 [L] |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 862W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7650pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 300nC @ 10V |
Series: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 41 mOhm @ 48.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 97A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The APT97N65LC6 by Advanced Power Technology (APT) is a N-Channel Enhancement Mode MOSFET Transistor. It has a maximum drain to source breakdown voltage (Vdss) of 650V and a continuous drain current of 77A. This device is preferred in the fields of power switchers, relays, and high power audio amplifiers.
In comparison to silicon transistors, the N-channel MOSFET offers higher conductivity and improved switching speed times compared to their bipolar counterparts. This improvement is due to the nature of MOSFET gate structure. The gate is isolated from the rest of the circuit so there is no resistance to impede the current flow.
The typical working principle of the APT97N65LC6 is to use the current applied to its gate to control the amount of current and voltage through its source and drain. The gate resistance is low, so the current and voltage through the drain is determined by the voltage on the gate, rather than the current flowing through the gate itself. This is known as "enhancement mode".
The active region of the transistor is a type of gate that can be used as an amplifier. This is due to the fact that the voltage from the gate can cause a change in the drain current which varies the resistance of the drain. The higher the gate voltage, the more the drain current will increase. This can be used to amplify small signals.
When in saturation mode, the APT97N65LC6 is used in power switching circuits. This mode is faster than the active region. In this mode, the drain voltage will become negative with respect to the source, and the device is fully "on". The collector current will be limited by the drain to source resistance, which is much lower than the active region.
In power supply applications, the APT97N65LC6 can be used as a switch to control the load current. The transistor can be used to switch power to a load in the same way as a triac. This can be done using either the low side or high side switch. The advantage of using a MOSFET transistor is that it can be used to turn on and off a much higher current than a similar sized Bipolar transistor.
Overall, the APT97N65LC6 MOSFET is a powerful device that can be used for controlling power supplies and amplifiers. It is useful for switching power to a load and for its active region of operation as an amplifier. This is due to its low gate resistance and high voltage from the gate. It has a higher conductance and operates at faster switching speeds than many other transistors. This makes the APT97N65LC6 one of the most effective and efficient transistors available.
The specific data is subject to PDF, and the above content is for reference
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