Allicdata Part #: | APT9F100S-ND |
Manufacturer Part#: |
APT9F100S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 1000V 9A D3PAK |
More Detail: | N-Channel 1000V 9A (Tc) 337W (Tc) Surface Mount D3... |
DataSheet: | APT9F100S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 1mA |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Supplier Device Package: | D3Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 337W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2606pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 80nC @ 10V |
Series: | POWER MOS 8™ |
Rds On (Max) @ Id, Vgs: | 1.6 Ohm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Tc) |
Drain to Source Voltage (Vdss): | 1000V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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.APT9F100S is a series of insulated gate MOSFET (IGFET) chips. It is designed to provide high power conversion efficiency and low conduction losses while operating in a wide temperature range. The APT9F100S chip is one of the most power efficient and reliable power MOSFETs available on the market today. It is made with optimized packaging techniques to ensure excellent electrical and thermal performance. The APT9F100S chip is suitable for a wide range of applications, including power conversion, motor control, audio amplifiers and high frequency switching power supplies. It can also be used for low-cost Printed-Circuit Board (PCB) designs.
The APT9F100S chip is a single-source-drain type MOSFET. It is fabricated using N-type Metal-Oxide-Semiconductor (NMOS) process technology. The gate of the device is made of metal oxide, while the body and the source are made of silicon. This type of MOSFET can operate in either depletion or enhancement mode, depending on the current flow through the gate and the body. The gate voltage determines the current flow through the device and the threshold voltage determines the type of operation.
The APT9F100S chip provides an extremely wide operating range, enabling the designer to use it in circuit designs across multiple disciplines. It has an operating temperature range from -40°C to +85°C. Its low on-resistance, low input capacitance and low gate charge make it an ideal choice for high-speed switching applications, such as high-frequency clock signals and power converters. The device also has a very low reverse recovery time, allowing for high-efficiency power conversion.
The APT9F100S chip uses direct gate drive technology, which eliminates the need for additional circuitry. This greatly simplifies the circuit design and reduces the power dissipation. Furthermore, the device is designed with integrated protection features, such as over-temperature protection, under voltage lockout and electro-static discharge protection. These features help ensure the device is safe and reliable, even during a wide range of environmental conditions.
The APT9F100S chip is designed for a wide range of applications, including power conversion, motor control, audio amplifiers and high-frequency switching power supplies. For example, it can be used in power converters to deliver extremely high switching speeds, allowing for improved power efficiency. It can also be used in motor control applications to provide high switching speeds and improved current control. Furthermore, it is also ideal for audio amplifiers, as it provides low distortion and low output impedance.
In summary, the APT9F100S is an ideal choice for a wide range of circuit designs, from power conversion to audio amplifiers. It is designed with integrated protection features and has an extremely wide operating range. With its advanced technology and optimal packaging techniques, the APT9F100S is one of the most power efficient and reliable power MOSFETs available on the market today.
The specific data is subject to PDF, and the above content is for reference
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