APT94N65B2C6

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

A Power Field Effect Transistor (FET), also known as a MOSFET, is a transconductive semiconductor device used to control large currents with a small signal. The APT94N65B2C6 is a high-voltage power MOSFET designed for applications requiring enhanced current handling capability. This paper explores the application field and working principle of the APT94N65B2C6.

APT94N65B2C6 Overview

The APT94N65B2C6 is a high current low-RDS(on) Power MOSFET designed for applications requiring enhanced current handling capability. The device is designed to provide superior switching speed, low on-resistance, excellent noise immunity and very low gate charge. The APT94N65B2C6 features high peak currents and high voltage ratings which make it ideal for high-frequency switching applications.

The device is available in a variety of packages and package options. The APT94N65B2C6 is available in TO-220, TO-220F, D2PAK, and SOT-223 packages. The device can operate up to 600V and at up to 100A.

Application of APT94N65B2C6

The APT94N65B2C6 is designed for high-voltage switching applications, such as DC-DC converters, switched-mode power supplies, motor drives, battery charging, and load switches. With its robust design and low gate charge, the device is an excellent choice for compact and high frequency applications. The device can be used for both high and low-side switch applications.

The APT94N65B2C6 is also ideal for applications where low power dissipation is required. The device’s low on-resistance means that less power is dissipated into the device, resulting in lower power losses and improved overall efficiency.

Working Principle of APT94N65B2C6

The APT94N65B2C6 is a planar MOSFET consisting of an array of metal–oxide–semiconductor (MOS) transistors. MOS technology makes it possible to build high-density circuits in a very small form factor. The device works by modulating electrical currents by controlling the electric field applied across an oxide insulator.

The APT94N65B2C6 uses the depletion-mode enhancement MOSFET architecture to achieve low on-state resistance and high voltage ratings. The device is composed of two p-substrate layers separated by an oxide insulator layer. The top two layers are the source and drain regions which are separated by the gate region. The gate is connected to a voltage source so that when a voltage is applied to the gate, electric current is allowed to flow between the source and drain regions.

When a voltage is applied to the gate, it creates a depletion channel in the channel region beneath the gate. This depletion channel restricts the flow of electric current from the source to the drain. Increasing the gate voltage increases the width and depth of the depletion channel, thus increasing the resistance. This is how the APT94N65B2C6 is able to modulate the current flow.

Conclusion

The APT94N65B2C6 is a high-voltage power MOSFET designed for applications requiring enhanced current handling capability. The device is designed for use in high-frequency switching applications, such as DC-DC converters, switched-mode power supplies, motor drives, battery charging, and load switches. The device features low on-state resistance and high voltage ratings, making it an excellent choice for compact and high frequency applications.

The device uses the depletion-mode enhancement MOSFET architecture to achieve low on-state resistance and high voltage ratings. The APT94N65B2C6 works by modulating electric currents by controlling the electric field applied across an oxide insulator. The device is composed of two p-substrate layers separated by an oxide insulator layer. When a voltage is applied to the gate, it creates a depletion channel in the channel region beneath the gate. This depletion channel restricts the flow of electric current from the source to the drain.

The specific data is subject to PDF, and the above content is for reference