Allicdata Part #: | APT9F100B-ND |
Manufacturer Part#: |
APT9F100B |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 1000V 9A TO-247 |
More Detail: | N-Channel 1000V 9A (Tc) 337W (Tc) Through Hole TO-... |
DataSheet: | APT9F100B Datasheet/PDF |
Quantity: | 1000 |
Series: | POWER MOS 8™ |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 1000V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.6 Ohm @ 5A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 80nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 2606pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 337W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247 [B] |
Package / Case: | TO-247-3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The APT9F100B is a Field Effect Transistor (FET) that has been specifically designed for and is ideal for switching applications. It is a high-speed switching device that can be used in a wide range of industrial, automotive and consumer devices. It is capable of producing high-speed switching operations with minimal timing errors. This device is also suitable for applications such as high-frequency switching, digital signal processing, audio signal conditioning and signal conditioning of power-supply applications.
The APT9F100B is a single-channel MOSFET device with an enhancement-mode design. It is designed to work at a voltage of 5V and is capable of handling high frequencies up to 1GHz. It has a low on-state resistance of just 1 ohms and a high-speed switching capability of up to 20MHz. It has a breakdown voltage of 10V and a maximum working current of 250mA. This makes it suitable for applications such as switching on and off loads with fast switching times.
The working principle of the APT9F100B is based on its ability to control the flow of current from the drain to the source. The gate voltage of the device is used to control the flow of current from the source to the drain. When the gate voltage is lowered, the current flow is reduced and when the gate voltage is raised, the current flow increases. This process is known as “gate modulation” and is used to control the current flow from the drain to the source. The APT9F100B can be used to produce high-frequency switching with low-power consumption.
The APT9F100B is a reliable and cost-effective solution for high-frequency switching needs. It has a very low power consumption, which makes it ideal for applications that require high-frequency switching with minimal power consumption. This device is an excellent choice for applications that require high-speed switching operations and minimal timing errors. Additionally, its relatively low on-state resistance makes it ideal for applications that require precise control of the current flow.
The APT9F100B offers a wide range of advantages that make it an attractive choice for applications such as high-frequency switching, digital signal processing, audio signal conditioning, and signal conditioning of power-supply applications. It has a high-speed switching capability of up to 20MHz and a minimum timing deviation of about 2.5ns. Additionally, its low on-state resistance of just 1 ohms makes it ideal for reducing power consumption when switching loads at high-frequencies. The APT9F100B is an ideal device for a wide range of industrial, automotive and consumer applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
APT95GR65B2 | Microsemi Co... | 7.83 $ | 60 | IGBT 650V 208A 892W T-MAX... |
APT94N60L2C3G | Microsemi Co... | -- | 20 | MOSFET N-CH 600V 94A TO26... |
APT9F100S | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 1000V 9A D3PA... |
APT94N65B2C6 | Microsemi Co... | 14.75 $ | 1000 | MOSFET N-CH 650V 95A T-MA... |
APT94N65B2C3G | Microsemi Co... | -- | 1000 | MOSFET N-CH 650V 94A TO-2... |
APT9M100B | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 1000V 9A TO-2... |
APT95GR65JDU60 | Microsemi Co... | 0.0 $ | 1000 | INSULATED GATE BIPOLAR TR... |
APT97N65LC6 | Microsemi Co... | -- | 1000 | MOSFET N-CH 650V 97A TO-2... |
APT90DR160HJ | Microsemi Co... | 11.84 $ | 1000 | DIODE MODULE 1.6V SOT227B... |
APT9F100B | Microsemi Co... | -- | 1000 | MOSFET N-CH 1000V 9A TO-2... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...