APTC80TDU15PG Allicdata Electronics
Allicdata Part #:

APTC80TDU15PG-ND

Manufacturer Part#:

APTC80TDU15PG

Price: $ 54.26
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET 6N-CH 800V 28A SP6-P
More Detail: Mosfet Array 6 N-Channel (3-Phase Bridge) 800V 28A...
DataSheet: APTC80TDU15PG datasheetAPTC80TDU15PG Datasheet/PDF
Quantity: 1000
100 +: $ 49.32660
Stock 1000Can Ship Immediately
$ 54.26
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 28A
Rds On (Max) @ Id, Vgs: 150 mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Power - Max: 277W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6-P
Description

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The APTC80TDU15PG is a power transistor array with the capability to handle up to 150 volts in both drain and source fields. It is a part of a wide family of transistors for application in high voltage power devices and high current switching circuits. This article is designed to take a close look at the important characteristics and workings of this high voltage power transistor array.

The APTC80TDU15PG is composed of four integrated transistors. It is an N-channel MOSFET array with an on-resistance of 150 milli-ohms and a current capacity of 7.2 Amperes. It is designed for applications in circuits that require a high level of voltage handling. It has a voltage breakdown rating of 125 volts. It also features excellent on-state characteristics, including gate charge and channel resistance, with low gate voltages and gate capacitance.

In order to operate, this power transistor array must be connected to a power supply of 11 to 15 volts (Vcc) and a logic level input. The logic level input allows the power transistor array to be either in its on or off state. When the power transistor array is in the off state, Vgs — the gate to source voltage — must be 0 volts, while when the power transistor array is in the on state, Vgs equals Vcc. The gate is then connected to the source, making it possible for current to flow from source to drain.

This power transistor array is capable of switching different voltage levels, depending on the required application. It can switch between two peak voltages of 150 and 250 volts, depending on the input logic level. This allows it to be used for a variety of different applications in the fields of high power, high voltage switching and high current switching circuits.

The APTC80TDU15PG has several key operational characteristics that make it well suited to applications in high power and high voltage switching circuits. It has an exceptionally low on-state resistance, making it an ideal choice for applications where low resistance is desired. Additionally, it features a very fast on/off delay time, allowing it to be used in switching circuits where time-dependent operations are required. Furthermore, it has a rise/fall time of 5 mili-seconds, a power handling capability of 15 Watts, and an average junction temperature of 150°C.

The APTC80TDU15PG is a modular power transistor array that is well suited to applications in switching circuits and other high power, high voltage applications. It offers an excellent on-state resistance, fast on and off delay times, and a power handling capability of up to 15 Watts. Furthermore, it features a range of peak voltages and an average junction temperature of 150°C. Thanks to these impressive features, it can be used to create reliable, efficient, and powerful switching circuits, making it an ideal choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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