APTC60HM70SCTG Allicdata Electronics
Allicdata Part #:

APTC60HM70SCTG-ND

Manufacturer Part#:

APTC60HM70SCTG

Price: $ 64.54
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET 4N-CH 600V 39A SP4
More Detail: Mosfet Array 4 N-Channel (H-Bridge) 600V 39A 250W ...
DataSheet: APTC60HM70SCTG datasheetAPTC60HM70SCTG Datasheet/PDF
Quantity: 1000
100 +: $ 58.66970
Stock 1000Can Ship Immediately
$ 64.54
Specifications
Series: CoolMOS™
Packaging: Bulk 
Part Status: Active
FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 39A
Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Power - Max: 250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4
Description

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The application field and working principle of the APTC60HM70SCTG transistor is divided into two parts: FETs (Field-Effect Transistors) and MOSFETs (Metal-Oxide Semiconductor Field-Effect Transistors). FETs are unipolar transistors, and MOSFETs are three-terminal unipolar field-effect transistors. The APTC60HM70SCTG is an array of 24 cascode FETs and MOSFETs put together.

A Field-Effect Transistor, or FET, is a type of transistor in which current flows through a semiconductor gate, rather than two diodes, to regulate current flow. This makes it different from a regular bipolar transistor, where current flows through two diodes in order to regulate current. FETs are also referred to as voltage-controlled transistors, as their operation is governed by voltage, rather than current.

The working principle of FETs are based on the concept of capacitance. A FET has three terminals: a gate, a source and a drain. Applying a positive voltage to the gate causes an electrical field to form within the semiconductor material, and this electrical field changes the conductivity of the channel region, allowing current to flow between the source and the drain. This change in channel conductance is referred to as "channel modulation".

Metal-Oxide Semiconductor Field-Effect Transistors, or MOSFETs, are a type of transistor that combines a metal-oxide layer with a semiconductor substrate. This allows the device to be much smaller than a bipolar transistor, as well as more efficient. The working principle of a MOSFET is similar to that of a FET, except the gate terminal instead uses a metal-oxide layer to modulate the channel conductance.

The APTC60HM70SCTG is an array of 24 cascode FETs and MOSFETs put together. Cascode FETs and MOSFETs are similar to regular FETs and MOSFETs, except that the gate terminal has a metal-oxide layer, as with a MOSFET, and also a metal-oxide-semiconductor diode. This extra diode provides extra current-handling capability, allowing the device to operate up to higher voltages.

In summary, the application field and working principle of the APTC60HM70SCTG transistor is divided into two parts: FETs and MOSFETs. FETs are unipolar transistors, and MOSFETs are three-terminal unipolar field-effect transistors. The APTC60HM70SCTG is an array of 24 cascode FETs and MOSFETs put together, and it works on the same principle as regular FETs and MOSFETs, but with a metal-oxide layer and a metal-oxide-semiconductor diode to allow a higher voltage rating.

The specific data is subject to PDF, and the above content is for reference

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