| Allicdata Part #: | APTC90H12SCTG-ND |
| Manufacturer Part#: |
APTC90H12SCTG |
| Price: | $ 86.39 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | MOSFET 4N-CH 900V 30A SP4 |
| More Detail: | Mosfet Array 4 N-Channel (H-Bridge) 900V 30A 250W ... |
| DataSheet: |  APTC90H12SCTG Datasheet/PDF |
| Quantity: | 1000 |
| 100 +: | $ 78.53440 |
Specifications
| Series: | CoolMOS™ |
| Packaging: | Bulk |
| Part Status: | Last Time Buy |
| FET Type: | 4 N-Channel (H-Bridge) |
| FET Feature: | Super Junction |
| Drain to Source Voltage (Vdss): | 900V |
| Current - Continuous Drain (Id) @ 25°C: | 30A |
| Rds On (Max) @ Id, Vgs: | 120 mOhm @ 26A, 10V |
| Vgs(th) (Max) @ Id: | 3.5V @ 3mA |
| Gate Charge (Qg) (Max) @ Vgs: | 270nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 6800pF @ 100V |
| Power - Max: | 250W |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Chassis Mount |
| Package / Case: | SP4 |
| Supplier Device Package: | SP4 |
Description
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MOSFETs are the most widely used transistor technology in circuits today. The APTC90H12SCTG is a type of power MOSFET (metal–oxide–semiconductor field-effect transistor) that is often used in power management applications. In this article we will explore the application field, working principle, and other key characteristics of the APTC90H12SCTG.The APTC90H12SCTG is a single-transistor power MOSFET array, consisting of four identical N-channel MOSFETs integrated into one package. It is designed for use in high-power, inductive, switched-mode power supplies, using high frequency switching – such as in inverters, motor drives, and power converters. The APTC90H12SCTG is designed to be able to handle both high power and fast switching, which makes it ideal for use in power supplies, as it can respond quickly to changes in load while also being able to handle considerable current. In addition, the device features low RDS ON values, which helps to reduce power losses and heat generated by the device.The APTC90H12SCTG is rated for a maximum voltage of 900V and a maximum current of 12A, making it suitable for applications that require both high power and fast switching. The low gate charge, low gate-drain capacitance and low gate resistance also add to its appeal in those types of applications.The working principle of the APTC90H12SCTG is based on the same principle as all MOSFETs – the channel is formed by applying a voltage across the gate and source terminals, which induces a current in the channel between the source and drain terminals. When a larger voltage is applied, the channel expands and current flows more freely between the source and drain. By controlling the gate voltage, the current conduction can be precisely controlled.In addition, the APTC90H12SCTG features a thermal sensing feature that can be used to monitor the temperature of the device. This feature can be used to protect the device from burning out in the case of an overload.The APTC90H12SCTG is a versatile power MOSFET array that is well suited to a variety of power management applications. Its combination of high power capability, fast switching, and monitoring features makes it an attractive choice for power management applications which require both speed and power.
The specific data is subject to PDF, and the above content is for reference
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