
Allicdata Part #: | APTC60HM24T3G-ND |
Manufacturer Part#: |
APTC60HM24T3G |
Price: | $ 67.44 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET 4N-CH 600V 95A SP3 |
More Detail: | Mosfet Array 4 N-Channel (H-Bridge) 600V 95A 462W ... |
DataSheet: | ![]() |
Quantity: | 1000 |
100 +: | $ 61.30690 |
Series: | CoolMOS™ |
Packaging: | Tray |
Part Status: | Active |
FET Type: | 4 N-Channel (H-Bridge) |
FET Feature: | Super Junction |
Drain to Source Voltage (Vdss): | 600V |
Current - Continuous Drain (Id) @ 25°C: | 95A |
Rds On (Max) @ Id, Vgs: | 24 mOhm @ 47.5A, 10V |
Vgs(th) (Max) @ Id: | 3.9V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: | 300nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 14400pF @ 25V |
Power - Max: | 462W |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SP3 |
Supplier Device Package: | SP3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
APTC60HM24T3G Application Field and Working Principle
APTC60HM24T3G is an array of metal–oxide–semiconductor field-effect transistors (MOSFETs) designed to control high current with low energy losses. Each MOSFET is designed with a vertical structure and an oxide layer used as the gate insulator, allowing low on-resistance and high breakdown voltage. This makes them extremely versatile components with a variety of applications, ranging from power management and motor control to renewable energy sources, smart grids, and beyond.
Application Fields
APTC60HM24T3G MOSFET arrays are commonly used in automotive and industrial systems for various tasks, such as motor control, lighting control, solenoid control, and power or motor supply. They are also used in LED lighting, robotics, industrial automation, and new energy technologies.
In automotive applications, APTC60HM24T3G MOSFET arrays are used to provide reliable control of engine and emission systems, as well as power trains and accessories. By controlling high currents, they are also used to extend the life of batteries, providing efficient and precise regulation of battery power over its full range.
MOSFET arrays are often chosen as the specific component over other types of MOSFETs to improve switching power loss in high power switches. In power cycling, they are proven to be more efficient and offer improved reliability compared to other transistors. As such, they are a preferred component for renewable energy such as solar and wind turbines, along with ground-building power lines and other applications.
The reliability and proven efficiency of MOSFET arrays makes them ideal for high-volume production and industrial applications. They are also used in commercial or consumer electronics, providing cost-effective solutions for a wide range of industries.
Working Principle
MOSFET arrays are composed of several MOSFETs connected in parallel for higher current carrying capacity, improved efficiency, and simplified circuit design. When a voltage is applied to the MOSFETs, the oxide layer forms a capacitance and creates an oxide electric field. This field will cause electrons or ions to be transferred through the dielectric, allowing the current to flow from source to drain.
APTC60HM24T3G MOSFETs are designed with a vertical structure and an oxide layer used as a gate insulator. This vertical structure provides lower on-resistance and higher breakdown voltage, allowing them to be used in a variety of applications where accuracy and reliability are important. They are also able to control high current efficiently and with low power loss.
Due to their low on-resistance and high breakdown voltage, APTC60HM24T3G MOSFET arrays are often seen as the components of choice in power management systems and motor control. They offer the advantage of a lower power loss than other MOSFETs, providing cost efficiencies and potentially improved system performance in a variety of applications.
In summary, APTC60HM24T3G MOSFET arrays offer numerous advantages for various applications, such as automotive and industrial, LED and renewable energy systems. With their low on-resistance, high breakdown voltage, and reliable and efficient performance, they are an ideal choice for power management, motor control, and other applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
APTC60AM45B1G | Microsemi Co... | 35.5 $ | 1000 | MOSFET 3N-CH 600V 49A SP1... |
APTC90AM60T1G | Microsemi Co... | 47.97 $ | 1000 | MOSFET 2N-CH 900V 59A SP1... |
APTC60HM45SCTG | Microsemi Co... | 73.42 $ | 1000 | MOSFET 4N-CH 600V 49A SP4... |
APTCV60HM45RCT3G | Microsemi Co... | 47.19 $ | 1000 | POWER MOD IGBT3 FULL BRID... |
APTC60TAM21SCTPAG | Microsemi Co... | 182.67 $ | 1000 | MOSFET 6N-CH 600V 116A SP... |
APTC60VDAM45T1G | Microsemi Co... | 29.75 $ | 1000 | MOSFET 2N-CH 600V 49A SP1... |
APTC60AM83B1G | Microsemi Co... | 0.0 $ | 1000 | MOSFET 3N-CH 600V 36A SP1... |
APTC60DDAM45T1G | Microsemi Co... | 29.75 $ | 1000 | MOSFET 2N-CH 600V 49A SP1... |
APTCV60HM45BT3G | Microsemi Co... | 42.2 $ | 1000 | POWER MOD IGBT3 FULL BRID... |
APTC60DSKM70CT1G | Microsemi Co... | 0.0 $ | 1000 | MOSFET 2N-CH 600V 39A SP1... |
APTCV60TLM70T3G | Microsemi Co... | 0.0 $ | 1000 | POWER MODULE - IGBTIGBT M... |
APTC60DDAM70T1G | Microsemi Co... | 23.36 $ | 1000 | MOSFET 2N-CH 600V 39A SP1... |
APTC90H12T2G | Microsemi Co... | 0.0 $ | 1000 | MOSFET 4N-CH 900V 30A SP2... |
APTC60HM70SCTG | Microsemi Co... | 64.54 $ | 1000 | MOSFET 4N-CH 600V 39A SP4... |
APTC80SK15T1G | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 800V 28A SP1N... |
APTC60HM35T3G | Microsemi Co... | 48.1 $ | 1000 | MOSFET 4N-CH 600V 72A SP3... |
APTCV50H60T3G | Microsemi Co... | 33.82 $ | 1000 | IGBT TRENCH FULL BRIDGE S... |
APTC60SKM35T1G | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 600V 72A SP1N... |
APTC80DSK29T3G | Microsemi Co... | 0.0 $ | 1000 | MOSFET 2N-CH 800V 15A SP3... |
APTC60DSKM24T3G | Microsemi Co... | 67.2 $ | 7 | MOSFET 2N-CH 600V 95A SP3... |
APTC90DAM60T1G | Microsemi Co... | 32.85 $ | 1000 | MOSFET N-CH 900V 59A SP1N... |
APTC60TAM35PG | Microsemi Co... | 83.59 $ | 1000 | MOSFET 6N-CH 600V 72A SP6... |
APTC60HM70BT3G | Microsemi Co... | 49.47 $ | 1000 | MOSFET 4N-CH 600V 39A SP3... |
APTCLGVTR | APEM Inc. | 0.46 $ | 1000 | SWITCH TACTILE SPST-NO 0.... |
APTC60AM70T1G | Microsemi Co... | 0.0 $ | 1000 | MOSFET 2N-CH 600V 39A SP1... |
APTC80H15T3G | Microsemi Co... | 29.8 $ | 1000 | MOSFET 4N-CH 800V 28A SP3... |
APTC60HM24T3G | Microsemi Co... | 67.44 $ | 1000 | MOSFET 4N-CH 600V 95A SP3... |
APTC80A15SCTG | Microsemi Co... | 54.47 $ | 1000 | MOSFET 2N-CH 800V 28A SP4... |
APTCV60TLM99T3G | Microsemi Co... | 0.0 $ | 1000 | POWER MODULE IGBT QUAD 60... |
APTC60VDAM24T3G | Microsemi Co... | 45.84 $ | 1000 | MOSFET 2N-CH 600V 95A SP3... |
APTC60DAM24CT1G | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 600V 95A SP4N... |
APTC80H15T1G | Microsemi Co... | 29.67 $ | 1000 | MOSFET 4N-CH 800V 28A SP1... |
APTC80A10SCTG | Microsemi Co... | 58.98 $ | 1000 | MOSFET 2N-CH 800V 42A SP4... |
APTCV40H60CT1G | Microsemi Co... | 31.37 $ | 1000 | IGBT TRENCH FULL BRIDGE S... |
APTCV60HM45BC20T3G | Microsemi Co... | 47.22 $ | 1000 | POWER MOD IGBT3 FULL BRID... |
APTC60HM83FT2G | Microsemi Co... | 30.77 $ | 1000 | MOSFET 2N-CH 600V 36A MOD... |
APTCLVTR | APEM Inc. | 0.46 $ | 1000 | SWITCH TACTILE SPST-NO 0.... |
APTC80DA15T1G | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 800V 28A SP1N... |
APTC60DSKM70T3G | Microsemi Co... | 0.0 $ | 1000 | MOSFET 2N-CH 600V 39A SP3... |
APTCFP2VTR | APEM Inc. | 0.47 $ | 1000 | SWITCH TACTILE SPST-NO 0.... |
MOSFET 2N-CH 30V 8AMosfet Array 2 N-Chan...

MOSFET 2N-CH 40V 6A 8PWRPAKMosfet Array ...

MOSFET 2P-CH 30V 5.8A 8SOICMosfet Array ...

MOSFET 2N-CH 80V 1.1A 8SOICMosfet Array ...

MOSFET 2N-CH 56LFPAKMosfet Array

MOSFET 2N-CH 30V 8SOICMosfet Array 2 N-C...
