APTC60AM24T1G Allicdata Electronics
Allicdata Part #:

APTC60AM24T1G-ND

Manufacturer Part#:

APTC60AM24T1G

Price: $ 39.45
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET 2N-CH 600V 95A SP1
More Detail: Mosfet Array 2 N-Channel (Half Bridge) 600V 95A 46...
DataSheet: APTC60AM24T1G datasheetAPTC60AM24T1G Datasheet/PDF
Quantity: 1000
100 +: $ 35.85970
Stock 1000Can Ship Immediately
$ 39.45
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 95A
Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
Power - Max: 462W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1
Description

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APTC60AM24T1G is an array consisting of 60 N-channels and MOSFETs in a single 24-pin SOIC package. Each of the individual MOSFET transistors has an on-resistance of 247mΩ and a maximum current of 20A. This makes it suitable for a wide variety of applications, from controlling light and electric motors to audio power amplifiers.

Application Field

Due to its low on-resistance and high current output, the APTC60AM24T1G is ideal for use in power switching and linear applications such as motor control and LED lighting. It can also be used as an audio power amplifier, providing good sound quality, dynamic range, and power efficiency. The low on-resistance of the individual MOSFETs helps reduce power dissipation and increase power efficiency, while the wide range of available current allows it to be used in a variety of different systems.

In addition to its use in consumer electronics, the APTC60AM24T1G can also be used in industrial applications such as relays and contactors, as well as robotic actuators. Because of its high current rating, it can also be used in high power amplifier designs, allowing for the production of large amounts of power. The low on-resistance also allows it to be used in high-speed switching applications, giving it the ability to switch signals quickly and efficiently.

Working Principle

An array of 60 N-Channel MOSFETs is located inside the APTC60AM24T1G package, each consisting of a gate, drain and source. All three transistors share the same gate terminal, which is used to drive the transistors. When the voltage is applied to the gate, electrons move between the source and drain, allowing current to flow between them. This is the main working principle of the APTC60AM24T1G.

The low on-resistance of the individual MOSFETs helps to reduce power dissipation and provide improved efficiency. This can also provide a higher current output, as the MOSFETs in the array operate as a single large transistor and can be switched on and off quickly, allowing for higher switching speeds. The package also helps to save space in a circuit, as the individual MOSFETs are housed in a single, compact package.

Conclusion

The APTC60AM24T1G is a compact and powerful array of MOSFETs which can be used in a variety of applications. Its low on-resistance and high current output make it ideal for power switching and linear applications, while its wide range of available current allows it to be used in high power amplifier designs. It is also suitable for industrial applications such as relays and contactors, as well as robotic actuators. The low on-resistance of the individual MOSFETs helps reduce power dissipation and provide improved efficiency, while the package also helps to save space in a circuit.

The specific data is subject to PDF, and the above content is for reference

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