APTC80H15T1G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

A MOSFET (metal-oxide-semiconductor field-effect transistor) array is a type of integrated circuit that consists of multiple transistors arranged in a grid formation with a common source terminal and separate drain and gate connections to each device. The MOSFET array is designed to be used in applications where switching and linear control are necessary. The APTC80H15T1G is a MOSFET array from Advanced Power Technology Corporation (APT) that is widely used in a variety of applications.

The APTC80H15T1G is a dual-gate, triple-device MOSFET array that includes two n-channel and one p-channel MOSFETs. The array is housed in a small package measuring just 5.0 mm x 7.5 mm and is capable of dissipating up to 6.5W in a worst-case scenario. It has a maximum gate-source voltage of 17V and a maximum drain-source voltage of 75V. The array is designed with a low on-resistance of just 17 mΩ and is capable of switching up to 35A in a continuous current mode. This makes the APTC80H15T1G suitable for a wide range of applications that require low RDS(on) and very high efficiency.

The APTC80H15T1G is primarily used in automotive applications where it is used to reduce the number of switches, reduce heat, and improve efficiency. The array can be used in the powertrain, power steering, and braking systems of vehicles where a low on-resistance and tight control of current and voltage are necessary. It is also widely used in the motor control and servo control of robotic systems for precise control of movement and position. The APTC80H15T1G is also popular in power converters, inverters, and other power supply applications.

The APTC80H15T1G is a dual-gate MOSFET array, which means that the gate of each MOSFET is controlled independently. This allows the device to be used in applications that require independent control of each of the three MOSFETs. The APTC80H15T1G is designed to function as either an inverter or a power switch, depending on the configuration. When used as an inverter, the structure will invert the input signal, whereas when used as a power switch, the output voltage is simply switched.

The APTC80H15T1G uses gate-source voltages to control the gate of each MOSFET by creating an electric field around the gate. This electric field repels electrons and forms a depletion region between the gate and the channel, which effectively creates a barrier for the flow of current. This barrier is known as a reverse-biased junction and is used to regulate the flow of current when used as a power switch. Inverter mode can be realized by switching the applied gate-source voltage to the desired logic levels, allowing the control of output power levels and current flow.

The APTC80H15T1G is ideal for applications where low on-resistance, high switching efficiency, and independent control of three MOSFETs are required. It is a reliable, efficient, and cost-effective solution for a variety of automotive, motor control, and power supply applications.

The specific data is subject to PDF, and the above content is for reference