APTCV60HM70BT3G Allicdata Electronics
Allicdata Part #:

APTCV60HM70BT3G-ND

Manufacturer Part#:

APTCV60HM70BT3G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: POWER MOD IGBT3 FULL BRIDGE SP3
More Detail: IGBT Module Trench Field Stop Boost Chopper, Full ...
DataSheet: APTCV60HM70BT3G datasheetAPTCV60HM70BT3G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
IGBT Type: Trench Field Stop
Configuration: Boost Chopper, Full Bridge
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 50A
Power - Max: 250W
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 3.15nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3
Description

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IGBTs (Insulated Gate Bipolar Transistors) are a widely used form of transistor that combines both the attributes of FET and BJT, two widely used types of transistors. IGBT modules are a special type of IGBT, containing multiple IGBTs in one package that allows for a more compact form factor and higher power density.

APTCV60HM70BT3G is an IGBT module with a maximum junction temperature of 175°C and a voltage rating of 700V. It has a high current capacity of 70A and features high switching speed, low switching loss, low noise and good avalanche characteristics. The module also features a soft reverse recovery control function, which allows it to be used in the inverter circuits of motor drives.

The main application of the APTCV60HM70BT3G module is in motor drives. It is commonly used in motor drive circuits, such as in AC servo systems, brushless DC motor applications and permanent magnet synchronous motor applications. The module\'s high current capacity and soft reverse recovery control makes it suitable for these applications.

The working principle of the APTCV60HM70BT3G module is based on the IGBT technology. IGBTs are a combination of FET and BJT transistors, which utilizes the advantages of both the types. IGBTs are built with a N-type FET as its input and a P-type FET as its output. When a voltage is applied to the gate of the N-type FET, the current flows between the drain and source, thus turning the output P-type FET on and allowing the current to flow through it. This is the main working principle of an IGBT.

In the APTCV60HM70BT3G module, multiple IGBTs are integrated together in a single package to provide a more compact form factor and higher power density. The IGBTs are connected in parallel to each other, thus allowing for higher current capacity. The module also features a soft reverse recovery control function, which allows the module to be used in the inverter circuits of motor drives.

In conclusion, the APTCV60HM70BT3G module is a popular IGBT module that combines the advantages of both FET and BJT technology. It is mainly used in motor drive circuits, such as in AC servo systems, brushless DC motor applications and permanent magnet synchronous motor applications. The working principle of the module is based on the IGBT technology, where a N-type FET is used as the input and a P-type FET is used as the output. Multiple IGBTs are integrated together in the module to provide a more compact form factor and higher power density, while a soft reverse recovery control function allows it to be used in motor drive circuits.

The specific data is subject to PDF, and the above content is for reference

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