APTC60DDAM70T1G Allicdata Electronics
Allicdata Part #:

APTC60DDAM70T1G-ND

Manufacturer Part#:

APTC60DDAM70T1G

Price: $ 23.36
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET 2N-CH 600V 39A SP1
More Detail: Mosfet Array 2 N Channel (Dual Buck Chopper) 600V ...
DataSheet: APTC60DDAM70T1G datasheetAPTC60DDAM70T1G Datasheet/PDF
Quantity: 1000
100 +: $ 21.23470
Stock 1000Can Ship Immediately
$ 23.36
Specifications
Series: CoolMOS™
Packaging: Tray 
Part Status: Active
FET Type: 2 N Channel (Dual Buck Chopper)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 39A
Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Power - Max: 250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1
Description

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A APTC60DDAM70T1G, also known as a Partially Depleted SOI(PD-SOI) Power MOSFET, is designed to provide reliable power switching in high power, low voltage applications. It is a single transistor with an array of twelve MOSFETs located on its surface. The series is available in the 3V–10V range and offers a maximum rated current of 72A.

Application Field

The APTC60DDAM70T1G is ideal for use in a variety of devices and systems, such as lighting, power supplies, and power conditioning. Typical applications include switching power supplies, lighting, and other high power, low voltage systems. With its low capacitance and low noise design, the APTC60DDAM70T1G is a great choice for use in portable applications such as cell phones, PDAs, and medical devices.

Working Principle

The working principle of the APTC60DDAM70T1G depends on the use of a MOSFET array on its surface. Each MOSFET relies on the movement of electrons to create an electric current. The array allows for the movement of a certain amount of electrons, which is dependent upon the size of the array. The APTC60DDAM70T1G has an array of twelve MOSFETs that allows for a maximum current rating of 72A. When a voltage is applied to the MOSFETs, the current flows through the device and into the load. As the voltage is varied, the current is varied accordingly.

The APTC60DDAM70T1G also features an internal gate driver that can control the slew rate and dead time of its output. This gate driver allows for better control of the device and helps to improve the efficiency of the power supply. The device also features a low capacitance design which helps reduce losses across the device. This allows for improved power output and efficiency in high power applications.

The APTC60DDAM70T1G is a reliable and efficient solution for many power switching applications. With its low noise and high current ratings, the APTC60DDAM70T1G is a great choice for a variety of applications. Additionally, the internal gate driver improves device efficiency and allows for better control over the device. For these reasons, the APTC60DDAM70T1G is an excellent choice for a wide variety of power switching applications.

The specific data is subject to PDF, and the above content is for reference

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