APTC60DDAM45T1G Allicdata Electronics
Allicdata Part #:

APTC60DDAM45T1G-ND

Manufacturer Part#:

APTC60DDAM45T1G

Price: $ 29.75
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET 2N-CH 600V 49A SP1
More Detail: Mosfet Array 2 N Channel (Dual Buck Chopper) 600V ...
DataSheet: APTC60DDAM45T1G datasheetAPTC60DDAM45T1G Datasheet/PDF
Quantity: 1000
100 +: $ 27.04700
Stock 1000Can Ship Immediately
$ 29.75
Specifications
Series: CoolMOS™
Packaging: Tray 
Part Status: Active
FET Type: 2 N Channel (Dual Buck Chopper)
FET Feature: Super Junction
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 49A
Rds On (Max) @ Id, Vgs: 45 mOhm @ 24.5A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
Power - Max: 250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1
Description

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APTC60DDAM45T1G is an integrated circuit comprising of a set of power MOSFET transistors in a multi-array configuration. The intent of the device is to provide an affordable yet efficient solution for the power supply requirements of various electrical systems. The device offers high current capability while maintaining excellent voltage regulation, with a total capacity of 45 watt.

The MOSFET array comprises of eight cell transistors, which are coupled in series. Each cell transistor is capable of producing an output of 0.5 watts, up to a total of 4 watts. This makes the APTC60DDAM45T1G well suited for applications in various types of industrial, automotive, medical and consumer electronics. The device can be used in applications requiring high current capability, such as dynamo-electric machines, inverters, converters and power supplies.

The device has a metal oxide semiconductor (MOS) gate architecture, which allows for the switching of current flowing between the drain electrode and the source electrode. This architecture eliminates the need for a base driver and is able to handle high current switching at high speeds with corresponding high efficiency. The device also includes two P-channel and two N-channel transistors on the substrate, which can provide a higher level of output regulation when compared to other power MOSFETs. The device is able to switch current at a maximum frequency of 25MHz, making it suitable for high-speed power control applications.

The working principle of the device is based upon the MOSFET transistor structure. As input voltage is applied, a voltage is then applied to the gate terminal, creating an electric field in the thin sheet of gate oxide separating the gate and the channel. The field induces charge carriers in the channel, creating a channel in which the input voltage can flow. As the input voltage is varied, the resistance of the channel also changes, creating a varying current. The current can then be switched off and on, allowing the device to be used as an electronically controlled switch.

In summary, APTC60DDAM45T1G is suitable for a variety of power supply related applications. Its high current capacity and excellent voltage regulation, coupled with its MOSFET gate architecture make it suitable for applications in various industrial, automotive, medical and consumer electronics. The device is able to function up to a maximum frequency of 25MHz and can provide a high level of output regulation.

The specific data is subject to PDF, and the above content is for reference

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