| Allicdata Part #: | APTCV50H60T3G-ND |
| Manufacturer Part#: |
APTCV50H60T3G |
| Price: | $ 33.82 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | IGBT TRENCH FULL BRIDGE SP3 |
| More Detail: | IGBT Module NPT, Trench Field Stop Full Bridge 600... |
| DataSheet: | APTCV50H60T3G Datasheet/PDF |
| Quantity: | 1000 |
| 100 +: | $ 30.74700 |
| Series: | -- |
| Part Status: | Active |
| IGBT Type: | NPT, Trench Field Stop |
| Configuration: | Full Bridge |
| Voltage - Collector Emitter Breakdown (Max): | 600V |
| Current - Collector (Ic) (Max): | 80A |
| Power - Max: | 176W |
| Vce(on) (Max) @ Vge, Ic: | 1.9V @ 15V, 50A |
| Current - Collector Cutoff (Max): | 250µA |
| Input Capacitance (Cies) @ Vce: | 3.15nF @ 25V |
| Input: | Standard |
| NTC Thermistor: | Yes |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Chassis Mount |
| Package / Case: | SP3 |
| Supplier Device Package: | SP3 |
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IGBT (Insulated Gate Bipolar Transistor) modules are commonly used in applications where high current or voltage switching is required. The APTCV50H60T3G is an IGBT module with a specific range of features that make it suitable for switching high currents and voltages. This module has a rating of 960V, 50A and has a maximum junction temperature of 150°C. It has a low node capacitance of 4.2nF and a high commutation performance. These features make it ideal for applications in industrial, power electronics and high-power motor control.
The APTCV50H60T3G is built using two N-type IGBTs in a half-bridge configuration, as well as built-in FWD flywheels and diode protection. The IGBTs have a blocking voltage rating of 960V, a collector-emitter saturation voltage of 1.2V at 50A, and an isolated gate driver for optimal performance. The module also features a low on-state voltage drop to reduce power losses, making it an efficient switching solution for power electronics applications.
The APTCV50H60T3G also features a temperature control system to help maintain optimal temperature in the module. The integrated temperature sensor monitors the module\'s heat, and a built-in control circuit turns the IGBTs off if the temperature reaches a pre-set point. This ensures that the module will not overheat and will continue to perform reliably in demanding applications.
When it comes to the working principle of the APTCV50H60T3G, it is quite straightforward. The two IGBTs connected in the module form a dual-pole switch, allowing for current to flow through the circuit when it is in an on-state. The gate control voltage is used to switch on or off the IGBTs, allowing for the current to be controlled. The diode protection prevents any reverse leakage of current through the module, further enhancing the reliability of the module.
The APTCV50H60T3G is ideally suited for industrial and power electronics applications where high current and voltage switching is required. It can handle up to 960V and 50A with high efficiency, and its temperature control system ensures that it will not overheat. This makes the APTCV50H60T3G an excellent choice for reliable switching applications in industrial and power electronics.
The specific data is subject to PDF, and the above content is for reference
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APTCV50H60T3G Datasheet/PDF