Allicdata Part #: | BC337-16RL1G-ND |
Manufacturer Part#: |
BC337-16RL1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 45V 0.8A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN 45V 800mA 210MHz 625m... |
DataSheet: | BC337-16RL1G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 800mA |
Voltage - Collector Emitter Breakdown (Max): | 45V |
Vce Saturation (Max) @ Ib, Ic: | 700mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 100mA, 1V |
Power - Max: | 625mW |
Frequency - Transition: | 210MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | BC337 |
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.BC337-16RL1G is a PNP-type BC337 transistor which belongs to the Bipolar Junction Transistor (BJT) family, more specifically the Single category. Commonly used for amplifying, switching and general purpose applications, this small-signal transistor is able to work in two different ways, the common emitter mode or the common base mode, therefore allowing various circuit configurations:
- Common Emitter Mode: This configuration is mostly used, as it presents advantages like simplicity and high gain. In this way, the BC337-16RL1G acts as an amplifier, in which the input signal is applied to the base and the amplified output collected from the collector.
- Common Base Mode: As opposed to the common emitter mode, this configuration presents a low gain, so it is not suitable for amplifying signals, however it is useful for switching applications. Here, the input is applied to the collector, and the output obtained from the emitter.
The BC337-16RL1G has the following general characteristics: maximum collector current, Ic, of 625mA; maximum power dissipation Pc, of 625mW; maximum collector-base voltage, Vcb, of 40V; maximum collector-emitter voltage Vce, of 40V; maximum emitter-base voltage Veb, of 5V.By analyzing the datasheet, it is possible to determine and optimize the DC current gain, h_{FE}, and the frequency-dependent current gains F_{T} and F_{MAX}.
- DC Current Gain (h_{FE}): This gain is the ratio between the transistor collector current, Ic, and the base current, Ib, and it is expressed in dB. The gain of the BC337-16RL1G falls in the range of 200 to 800, depending on the collector current and the DC current gain can be optimized by using the transistor biasing techniques.
- Frequency-dependent Current Gains (F_{T}, F_{MAX}): Both F_{T} and F_{MAX} are used to measure the transistor speed in terms of frequency-dependent current gains. This can be determined by measuring the time between the point when the transistor is saturated and when it is turned off. The BC337-16RL1G presents F_{T} in the range of 100MHz and F_{MAX} up to 600MHz, depending on the collector current.
The wide range of applications and the optimized performance characteristics of the BC337-16RL1G make it ideal for many analog and digital components such as switch, amplifier, radio frequency amplifiers and oscillators, current and voltage regulator circuits, digital applications, power amplifiers and power supplies.Thanks to its two different working configurations, the BC337-16RL1G is a versatile component that can be used in a variety of circuits: from those composed only by one transistor to those using logic gates, the BC337-16RL1G can easily substitute other transistors of the same kind since its features and characteristics are quite similar.For applications like highly sensitive RF amplifiers, or in any switches or amplifier circuits where a fast response is required, then a BC337-16RL1G is the best choice.
The specific data is subject to PDF, and the above content is for reference
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