BC33725_J35Z Allicdata Electronics
Allicdata Part #:

BC33725_J35Z-ND

Manufacturer Part#:

BC33725_J35Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 45V 0.8A TO-92
More Detail: Bipolar (BJT) Transistor NPN 45V 800mA 100MHz 625m...
DataSheet: BC33725_J35Z datasheetBC33725_J35Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Power - Max: 625mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: BC337
Description

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The BC33725_J35Z transistor is a type of Bipolar Junction Transistor (BJT) with a single design that can meet a variety of different application needs. It is available in a variety of different packages, ranging from a conventional TO-220 through-hole package to a more compact 3-lead surface-mount package. This makes the transistor ideal for a wide array of different application types, such as power amplifiers and power supplies.

The BC33725_J35Z has a wide bandgap structure and an extended collector-to-emitter voltage range compared to its predecessors, allowing it to be used in a wide range of applications. It also has a wide gain bandwidth, allowing it to be used in high-frequency, high-current circuits. Furthermore, the transistor is also capable of a high switching speed, allowing it to be used in circuits requiring fast response times.

When it comes to the device\'s working principle, it is based on the movement of charge carriers from various reservoirs into the base and collector regions of the transistor. As current flows from the collector region to the base, the current density in the base is increased and the collector-emitter voltage is reduced. This results in the transistor being turned "on" and allowing current to flow through it. Conversely, when the base-collector current is decreased, the transistor acts as an open switch, preventing current from flowing. This can be used to control the output state of a circuit.

The BC33725_J35Z is an ideal choice for a variety of different application needs and is available in a variety of different packages, making it a very flexible device. Its wide bandgap structure and large collector-to-emitter voltage range make it suitable for power amplifiers and power supplies, and its fast switching speed makes it well-suited for high-frequency applications. Lastly, its simple working principle allows it to be easily implemented in circuits requiring fast operational response times.

The specific data is subject to PDF, and the above content is for reference

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