BC635_D75Z

Series:	--
Packaging:	Tape & Box (TB)
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	1A
Voltage - Collector Emitter Breakdown (Max):	45V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 150mA, 2V
Power - Max:	1W
Frequency - Transition:	100MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package:	TO-92-3
Base Part Number:	BC635

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The BC635_D75Z is a bipolar, single-transistor device that is used in a variety of applications. It is a low power, high speed, general purpose transistor that can be used to amplify signals or switch loads between power and ground. Due to its low power output and high speed capabilities, the BC635_D75Z is ideal for use in digital and analog circuits. The BC635_D75Z is a four-layer, NPN transistor made from a combination of sintered anodes, collector and emitter regions. It has a maximum collector current of 5 mA, a maximum collector-emitter voltage of 15V and a maximum operating temperature of 150 degrees Celsius. The BC635_D75Z has a number of features that enable it to be used in a wide range of applications. Its low power output makes it perfect for use in low power and high speed systems, as it can operate at frequencies up to 635 MHz. The device also boasts a low saturation voltage, which allows it to achieve higher power output without the added risk of destructive overheating. Its low input impedance and high gain also make the BC635_D75Z an ideal choice for amplifying signals and switching loads. The functioning of the BC635_D75Z is similar to that of other bipolar transistors. The device has three distinct regions: the base, collector and emitter. Electrons flow from the emitter to the collector through the base. When current passes through the base, it is amplified by the device. The resulting current then flows through the collector and emitter, completing the circuit.Perhaps the most important aspect of the BC635_D75Z is its versatility. It can be used in a wide range of applications, from amplifying signals to switching loads. It is ideal for use in low power and high speed systems, as it can operate at frequencies up to 635 MHz. Other applications include low noise amplification and layer switching in electronic devices. The device also has a low saturation voltage and a low input impedance, making it an ideal choice for amplifying signals.The BC635_D75Z is a versatile device that can be used in a variety of applications. It is a four-layer, NPN transistor, with a maximum collector current of 5 mA, and a maximum collector-emitter voltage of 15V and a maximum operating temperature of up to 150 degrees Celsius. The device works by passing current through the base, which is then amplified by the device and passed through the collector and emitter. This makes the BC635_D75Z ideal for use in low power and high speed systems, as well as for amplifying signals and switching loads.

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