Allicdata Part #: | BC638,112-ND |
Manufacturer Part#: |
BC638,112 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS PNP 60V 1A TO-92 |
More Detail: | Bipolar (BJT) Transistor PNP 60V 1A 100MHz 830mW T... |
DataSheet: | BC638,112 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 63 @ 150mA, 2V |
Power - Max: | 830mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | BC638 |
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Introduction
BC638,112 is a single stage, Bi-Polar Junction Transistor (BJT) used in various applications. It is a low power device with a low collector-emitter (CE) saturation voltage. It is widely used in various application fields such as power amplifier design, power switching circuits, and voltage regulators. In addition, BC638,112 is also suitable for use in digital applications such as LED Drivers and light dimmers.
Applications of BC638,112
BC638,112 has a wide range of applications, ranging from small signal switching applications to audio and power amplifier designs. It is an excellent choice for current limiting designs, as the output of the transistor can be adjusted without varying the supply current considerably. Moreover, it is also suitable for low-frequency oscillator circuits, and power conversion circuits. For example, it can be used in power switching applications such as AC line-controlled dimmers, LED drivers, and AC light dimmers.
The device is also capable of being used in voltage regulator circuits, as it can provide a fixed amount of current, regardless of the input voltage. In addition, it can be used in digital circuits as well. Due to its low collector-emitter saturation voltage, it can be used in frequency modulation controlled oscillator (FMCO) circuits, as well as logic gates. Furthermore, it can also be used for analog-to-digital conversion, as it can provide a linear input-output characteristics.
Working Principle
The working principle of the BC638,112 is similar to that of other BJTs. It consists of three doped layers, known as emitter, collector, and base. The base-collector and emitter-collector junctions are controlled by varying the voltage applied to the base-collector junction. When the base-collector voltage is greater than the emitter-collector voltage, the transistor is said to be in the forward-biased state. In this state, current flows from the collector to the emitter, in other words, current is amplified.
Alternatively, when the base-collector voltage is less than the emitter-collector voltage, the transistor is said to be in the reverse-biased state. In this state, there is no current flow between the collector and the emitter. This can be used for switching applications, as switching circuits require the device to be in either the forward-biased or reverse-biased state, depending on the voltage applied.
In addition, the BC638,112 also has a low collector-emitter saturation voltage, which allows it to be used in various low-power applications such as LED drivers, light dimmers, and AC line-controlled dimmers. This is because the device has a lower saturation voltage than other BJTs, thus allowing it to operate at lower power levels.
Conclusion
In conclusion, the BC638,112 is a single stage, Bi-Polar Junction Transistor (BJT) widely used in various applications. It has a wide range of application fields such as power amplifier design, power switching circuits, voltage regulators, LED drivers, and light dimmers. Moreover, it has a low collector-emitter saturation voltage, which makes it suitable for low-power applications. Its working principle is similar to that of other BJTs, whereby current is amplified when the base-collector voltage is greater than the emitter-collector voltage.
The specific data is subject to PDF, and the above content is for reference
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