Allicdata Part #: | BC638TF-ND |
Manufacturer Part#: |
BC638TF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 60V 1A TO-92 |
More Detail: | Bipolar (BJT) Transistor PNP 60V 1A 100MHz 1W Thro... |
DataSheet: | BC638TF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 150mA, 2V |
Power - Max: | 1W |
Frequency - Transition: | 100MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | BC638 |
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BC638TF is a high-performance bipolar NPN transistor with a high current gain and a rated power of 625mW. It offers high tolerances to the ambient temperature, making it a perfect choice for applications requiring reliable and predictable operation in specific temperature ranges. In addition, its small size makes it suitable for applications in tight spaces.
The major application field of the BC638TF is power supplies. It has excellent characteristics as an amplifier and can operate in switching and linear mode, as well as in applications involving inrush current limiting and transient filtering.
The working principle of the BC638TF is based on the use of a base-to-emitter junction. It is a junction where a positive charge carrier of one type is injected into a material of the opposite type. This allows current to flow when the base-to-emitter junction is forward biased. When the base-to-emitter junction is reverse biased, no current can flow. This is the basis for the transistor’s switching action, used to transfer energy from one circuit to another.
The BC638TF transistor is also used in converters. It can be used to convert alternating current (AC) to direct current (DC), and vice versa, as well as to control the speed of electrical motors or to regulate the output power of radio-frequency (RF) generators. It is also used in home appliances, communication systems and medical equipment.
In addition, the BC638TF has the ability to amplify low frequency signals. This capability is achieved using its wide dynamic range, excellent signal-to-noise ratio and fast settling time. It can also be used in switching circuits where it is used to control the power to the load.
At the heart of the BC638TF is the collector-to-base junction. This junction has a higher voltage drop than the base-to-emitter junction and plays a crucial role in the ability of the transistor to amplify signals. When this junction is forward biased, positive charges are collected by the base, making it a current source. This in turn allows charges to flow from the collector to the emitter, resulting in higher current gain.
The BC638TF\'s high performance and wide range of applications makes it an ideal choice for a wide variety of applications. Its high current gain allows it to efficiently amplify low frequency signals, while its robustness and durability make it a perfect choice for many power supply applications. Its small size allows it to be used where space is limited, and its excellent temperature tolerance makes it suitable for applications in a wide range of temperatures.
The specific data is subject to PDF, and the above content is for reference
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